nanostructured multilayers by reactive magnetron sputtering F Gourbilleau, X Portier, C Ternon, P Voivenel, R Madelon, R Rizk Applied Physics Letters 78 (20), 3058-3060, 2001 | 143 | 2001 |
An original approach for the fabrication of Si/SiO2 multilayers using reactive magnetron sputtering C Ternon, F Gourbilleau, X Portier, P Voivenel, C Dufour Thin Solid Films 419 (1-2), 5-10, 2002 | 98 | 2002 |
Carbon nanotubes as injection electrodes for organic thin film transistors CM Aguirre, C Ternon, M Paillet, P Desjardins, R Martel Nano Letters 9 (4), 1457-1461, 2009 | 88 | 2009 |
Silicon-rich SiO2/SiO2 multilayers: A promising material for the third generation of solar cell F Gourbilleau, C Ternon, D Maestre, O Palais, C Dufour Journal of Applied Physics 106 (1), 2009 | 75 | 2009 |
Si nanowire growth and characterization using a microelectronics-compatible catalyst: PtSi T Baron, M Gordon, F Dhalluin, C Ternon, P Ferret, P Gentile Applied physics letters 89 (23), 2006 | 75 | 2006 |
Electron scattering mechanisms in fluorine-doped SnO2 thin films G Rey, C Ternon, M Modreanu, X Mescot, V Consonni, D Bellet Journal of Applied Physics 114 (18), 2013 | 70 | 2013 |
Fabrication of silicon nanowire networks for biological sensing P Serre, C Ternon, V Stambouli, P Periwal, T Baron Sensors and Actuators B: Chemical 182, 390-395, 2013 | 64 | 2013 |
Fabrication and characterization of a composite ZnO semiconductor as electron transporting layer in dye-sensitized solar cells N Karst, G Rey, B Doisneau, H Roussel, R Deshayes, V Consonni, ... Materials Science and Engineering: B 176 (8), 653-659, 2011 | 62 | 2011 |
Mechanisms involved in the hydrothermal growth of ultra-thin and high aspect ratio ZnO nanowires T Demes, C Ternon, F Morisot, D Riassetto, M Legallais, H Roussel, ... Applied Surface Science 410, 423-431, 2017 | 57 | 2017 |
MOCVD of BiFeO3 Thin Films on SrTiO3 J Thery, C Dubourdieu, T Baron, C Ternon, H Roussel, F Pierre Chemical Vapor Deposition 13 (5), 232-238, 2007 | 50 | 2007 |
Structural properties of films grown by magnetron sputtering of a BiFeO3 target C Ternon, J Thery, T Baron, C Ducros, F Sanchette, J Kreisel Thin Solid Films 515 (2), 481-484, 2006 | 43 | 2006 |
Percolating silicon nanowire networks with highly reproducible electrical properties P Serre, M Mongillo, P Periwal, T Baron, C Ternon Nanotechnology 26 (1), 015201, 2014 | 35 | 2014 |
Roles of interfaces in nanostructured silicon luminescence C Ternon, C Dufour, F Gourbilleau, R Rizk The European Physical Journal B-Condensed Matter and Complex Systems 41, 325-332, 2004 | 35 | 2004 |
Comprehensive study of hydrothermally grown ZnO nanowires T Demes, C Ternon, D Riassetto, V Stambouli, M Langlet Journal of Materials Science 51, 10652-10661, 2016 | 34 | 2016 |
Si/SiO2 multilayers: synthesis by reactive magnetron sputtering and photoluminescence emission C Ternon, F Gourbilleau, R Rizk, C Dufour Physica E: Low-dimensional Systems and Nanostructures 16 (3-4), 517-522, 2003 | 32 | 2003 |
Low temperature processing to form oxidation insensitive electrical contact at silicon nanowire/nanowire junctions C Ternon, P Serre, JM Lebrun, V Brouzet, M Legallais, S David, T Luciani, ... Advanced Electronic Materials 1 (10), 1500172, 2015 | 27 | 2015 |
New insights in the structural and morphological properties of sol-gel deposited ZnO multilayer films T Demes, C Ternon, D Riassetto, H Roussel, L Rapenne, I Gélard, ... Journal of Physics and Chemistry of Solids 95, 43-55, 2016 | 24 | 2016 |
Anneal temperature dependence of Si/SiO2 superlattices photoluminescence X Portier, C Ternon, F Gourbilleau, C Dufour, R Rizk Physica E: Low-dimensional Systems and Nanostructures 16 (3-4), 439-444, 2003 | 24 | 2003 |
An innovative large scale integration of silicon nanowire-based field effect transistors M Legallais, TTT Nguyen, M Mouis, B Salem, E Robin, P Chenevier, ... Solid-State Electronics 143, 97-102, 2018 | 23 | 2018 |
Silicon nanonets for biological sensing applications with enhanced optical detection ability P Serre, V Stambouli, M Weidenhaupt, T Baron, C Ternon Biosensors and Bioelectronics 68, 336-342, 2015 | 23 | 2015 |