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Ying Wu
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Microwave dielectric properties of (ABi) 1/2MoO4 (A= Li, Na, K, Rb, Ag) type ceramics with ultra-low firing temperatures
D Zhou, CA Randall, LX Pang, H Wang, J Guo, GQ Zhang, Y Wu, KT Guo, ...
Materials Chemistry and Physics 129 (3), 688-692, 2011
732011
Novel Vertical Channel-All-Around (CAA) In-Ga-Zn-O FET for 2T0C-DRAM With High Density Beyond 4F2 by Monolithic Stacking
X Duan, K Huang, J Feng, J Niu, H Qin, S Yin, G Jiao, D Leonelli, X Zhao, ...
IEEE Transactions on Electron Devices 69 (4), 2196-2202, 2022
522022
Low temperature firing microwave dielectric ceramics (K0. 5Ln0. 5) MoO4 (Ln= Nd and Sm) with low dielectric loss
D Zhou, LX Pang, J Guo, GQ Zhang, Y Wu, H Wang, X Yao
Journal of the European Ceramic Society 31 (15), 2749-2752, 2011
522011
Microwave and Infrared Dielectric Response of Temperature Stable (1−x)BaMoO4xTiO2 Composite Ceramics
J Guo, D Zhou, H Wang, Y Chen, Y Zeng, F Xiang, Y Wu, X Yao
Journal of the American Ceramic Society 95 (1), 232-237, 2012
512012
Temperature stable microwave dielectric ceramic 0.3 Li2TiO3–0.7 Li (Zn0. 5Ti1. 5) O4 with ultra-low dielectric loss
Y Wu, D Zhou, J Guo, LX Pang, H Wang, X Yao
Materials Letters 65 (17-18), 2680-2682, 2011
512011
Integrating GeSn photodiode on a 200 mm Ge-on-insulator photonics platform with Ge CMOS devices for advanced OEIC operating at 2 μm band
S Xu, K Han, YC Huang, KH Lee, Y Kang, S Masudy-Panah, Y Wu, D Lei, ...
Optics express 27 (19), 26924-26939, 2019
342019
Germanium-tin (GeSn) P-channel fin field-effect transistor fabricated on a novel GeSn-on-insulator substrate
D Lei, KH Lee, YC Huang, W Wang, S Masudy-Panah, S Yadav, A Kumar, ...
IEEE Transactions on Electron Devices 65 (9), 3754-3761, 2018
302018
Ultra-low specific contact resistivity (1.4 10− 9 Ω cm2) for metal contacts on in-situ Ga-doped Ge0. 95Sn0. 05 film
Y Wu, S Luo, W Wang, S Masudy-Panah, D Lei, G Liang, X Gong, YC Yeo
Journal of Applied Physics 122 (22), 2017
272017
Microwave dielectric properties and low temperature firing of (1−x)Li2Zn3Ti4O12 –xLi2TiO3 (0.2≤x≤0.8) ceramics with B2O3–CuO addition
Y Wu, D Zhou, J Guo, LX Pang
Journal of Materials Science: Materials in Electronics 24, 1505-1510, 2013
202013
High Performance Ga2O3 Metal-Oxide-Semiconductor Field-Effect Transistors on an AlN/Si Substrate
D Lei, K Han, Y Wu, Z Liu, X Gong
IEEE Journal of the Electron Devices Society 7, 596-600, 2019
182019
Nanoscale metal-InGaAs contacts with ultra-low specific contact resistivity: Improved interfacial quality and extraction methodology
S Masudy-Panah, Y Wu, D Lei, A Kumar, YC Yeo, X Gong
Journal of Applied Physics 123 (2), 2018
172018
Colossal permittivity and dielectric relaxations in BaTi0. 99 (Nb0. 5Ga0. 5) 0.02 O3 ceramics
Y Wu, J Miao, Z Liu, Y Li
Ceramics International 41, S846-S850, 2015
172015
Elimination of the parasitic metal resistance in transmission line model for extraction of ultralow specific contact resistivity
Y Wu, H Xu, X Gong, YC Yeo
IEEE Transactions on Electron Devices 66 (7), 3086-3092, 2019
122019
Sub- Specific Contact Resistivity on P-type Ge and GeSn: In-situ Ga Doping with Ga Ion Implantation at 300 C, 25 C, and −100 C
Y Wu, LH Chua, W Wang, K Han, W Zou, T Henry, X Gong
2018 IEEE International Electron Devices Meeting (IEDM), 35.5. 1-35.5. 4, 2018
122018
Metal/P-type GeSn Contacts with Specific Contact Resistivity down to 4.410−10Ω-cm2
Y Wu, W Wang, S Masudy-Panah, Y Li, K Han, L He, Z Zhang, D Lei, S Xu, ...
2018 IEEE Symposium on VLSI Technology, 77-78, 2018
112018
High field temperature-independent field-effect mobility of amorphous indium–gallium–zinc oxide thin-film transistors: Understanding the importance of equivalent-oxide…
K Han, S Samanta, S Xu, Y Wu, X Gong
IEEE Transactions on Electron Devices 68 (1), 118-124, 2020
102020
Investigation on temperature dependent DC characteristics of gallium oxide metal-oxide-semiconductor field-effect transistors from 25 C to 300 C
D Lei, K Han, Y Wu, Z Liu, X Gong
Applied Physics Express 12 (4), 041001, 2019
102019
IEEE Symposium on VLSI Technology
Y Wu, S Lou, W Wang, S Masudy-Panah, X Gong, G Liang, YC Yeo
102017
Microwave dielectric properties and low temperature sintering of Li2Zn(Ti1−xSnx)3O8 (x≤0.20) ceramics with B2O3–CuO addition
Y Wu, D Zhou, J Guo, LX Pang
Journal of Materials Science: Materials in Electronics 24, 4942-4946, 2013
102013
First demonstration of complementary FinFETs and tunneling FinFETs co-integrated on a 200 mm GeSnOI substrate: A pathway towards future hybrid nano-electronics systems
K Han, Y Wu, YC Huang, S Xu, A Kumar, E Kong, Y Kang, J Zhang, ...
2019 Symposium on VLSI Technology, T182-T183, 2019
92019
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