Christophe Cardinaud
Christophe Cardinaud
Institut des matériaux Jean Rouxel, IMN, Université de Nantes, University of Nantes, Laboratoire des
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Mechanisms of oxygen plasma nanotexturing of organic polymer surfaces: from stable super hydrophilic to super hydrophobic surfaces
K Tsougeni, N Vourdas, A Tserepi, E Gogolides, C Cardinaud
Langmuir 25 (19), 11748-11759, 2009
Spectroscopic determination of the structure of amorphous nitrogenated carbon films
S Bhattacharyya, C Cardinaud, G Turban
Journal of applied physics 83 (8), 4491-4500, 1998
Plasma etching: principles, mechanisms, application to micro-and nano-technologies
C Cardinaud, MC Peignon, PY Tessier
Applied Surface Science 164 (1-4), 72-83, 2000
In situ x-ray photoelectron spectroscopy analysis of SiOxFy passivation layer obtained in a SF6/O2 cryoetching process
J Pereira, LE Pichon, R Dussart, C Cardinaud, CY Duluard, ...
Applied Physics Letters 94 (7), 2009
Characterization of silicon dioxide films deposited at low pressure and temperature in a helicon diffusion reactor
C Charles, G Giroult‐Matlakowski, RW Boswell, A Goullet, G Turban, ...
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 11 (6 …, 1993
Polyhedral oligomeric silsesquioxane (POSS) based resists: material design challenges and lithographic evaluation at 157 nm
E Tegou, V Bellas, E Gogolides, P Argitis, D Eon, G Cartry, C Cardinaud
Chemistry of materials 16 (13), 2567-2577, 2004
RF sputtered amorphous chalcogenide thin films for surface enhanced infrared absorption spectroscopy
F Verger, V Nazabal, F Colas, P Němec, C Cardinaud, E Baudet, ...
Optical Materials Express 3 (12), 2112-2131, 2013
Global model and diagnostic of a low-pressure SF6/Ar inductively coupled plasma
L Lallement, A Rhallabi, C Cardinaud, MC Peignon-Fernandez, LL Alves
Plasma Sources Science and Technology 18 (2), 025001, 2009
Analyse XPS des surfaces de Si et SiO2 exposées aux plasmas de CHF3 et CHF3—C2F6. Polymérisation et gravure
C Cardinaud, A Rhounna, G Turban, B Grolleau
Revue de physique appliquée 24 (3), 309-321, 1989
Structural analysis of RF sputtered Ge-Sb-Se thin films by Raman and X-ray photoelectron spectroscopies
E Baudet, C Cardinaud, A Girard, E Rinnert, K Michel, B Bureau, ...
Journal of Non-Crystalline Solids 444, 64-72, 2016
Studies on structural properties of amorphous nitrogenated carbon films from electron energy loss, ellipsometry, Auger electron spectroscopy, and electron-spin resonance
S Bhattacharyya, C Vallee, C Cardinaud, O Chauvet, G Turban
Journal of applied physics 85 (4), 2162-2169, 1999
Fluorine-based plasmas: main features and application in micro-and nanotechnology and in surface treatment
C Cardinaud
Comptes Rendus Chimie 21 (8), 723-739, 2018
Experimental design approach for deposition optimization of RF sputtered chalcogenide thin films devoted to environmental optical sensors
E Baudet, M Sergent, P Němec, C Cardinaud, E Rinnert, K Michel, ...
Scientific Reports 7 (1), 3500, 2017
HiPIMS ion energy distribution measurements in reactive mode
PY Jouan, L Le Brizoual, M Ganciu, C Cardinaud, S Tricot, MA Djouadi
IEEE transactions on plasma science 38 (11), 3089-3094, 2010
Plasma etching of poly (dimethylsiloxane): Roughness formation, mechanism, control, and application in the fabrication of microfluidic structures
ME Vlachopoulou, G Kokkoris, C Cardinaud, E Gogolides, A Tserepi
Plasma Processes and Polymers 10 (1), 29-40, 2013
Etching studies of silica glasses in SF6/Ar inductively coupled plasmas: Implications for microfluidic devices fabrication
L Lallement, C Gosse, C Cardinaud, MC Peignon-Fernandez, A Rhallabi
Journal of Vacuum Science & Technology A 28 (2), 277-286, 2010
Electronic and optical investigation of hydrogenated amorphous carbon (aC: H) by X-ray photoemission spectroscopy and spectroscopic ellipsometry
J Hong, S Lee, C Cardinaud, G Turban
Journal of non-crystalline solids 265 (1-2), 125-132, 2000
Enhanced performance of PMOS MUGFET via integration of conformal plasma-doped source/drain extensions
D Lenoble, K Anil, A De Keersgieter, P Eybens, N Collaert, R Rooyackers, ...
2006 Symposium on VLSI Technology, 2006. Digest of Technical Papers., 168-169, 2006
Influence of the gas mixture on the reactive ion etching of InP in -H2 plasmas
Y Feurprier, C Cardinaud, G Turban
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 1997
Inductively coupled plasma etching of HgCdTe using a CH4-based mixture
E Laffosse, J Baylet, JP Chamonal, G Destefanis, G Cartry, C Cardinaud
Journal of electronic materials 34, 740-745, 2005
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