| Mechanism of Threshold Voltage Shift in -GaN Gate AlGaN/GaN Transistors X Tang, B Li, HA Moghadam, P Tanner, J Han, S Dimitrijev IEEE Electron Device Letters 39 (8), 1145-1148, 2018 | 114 | 2018 |
| Growth of 3C–SiC on 150-mm Si (100) substrates by alternating supply epitaxy at 1000 C L Wang, S Dimitrijev, J Han, A Iacopi, L Hold, P Tanner, HB Harrison Thin solid films 519 (19), 6443-6446, 2011 | 106 | 2011 |
| Power-switching applications beyond silicon: Status and future prospects of SiC and GaN devices S Dimitrijev, J Han, HA Moghadam, A Aminbeidokhti Mrs Bulletin 40 (5), 399-405, 2015 | 104 | 2015 |
| Electrical and physical characterization of gate oxides on grown in diluted KY Cheong, S Dimitrijev, J Han, HB Harrison Journal of applied physics 93 (9), 5682-5686, 2003 | 102 | 2003 |
| The effect of Al addition on the gas sensing properties of Fe2O3-based sensors JS Han, T Bredow, DE Davey, AB Yu, DE Mulcahy Sensors and Actuators B: Chemical 75 (1-2), 18-23, 2001 | 100 | 2001 |
| Associated comorbidities in psoriasis and inflammatory bowel disease AM Binus, J Han, AA Qamar, EA Mody, EW Holt, AA Qureshi Journal of the European Academy of Dermatology and Venereology 26 (5), 644-650, 2012 | 81 | 2012 |
| Demonstration of p-type 3C–SiC grown on 150 mm Si (1 0 0) substrates by atomic-layer epitaxy at 1000 C L Wang, S Dimitrijev, J Han, P Tanner, A Iacopi, L Hold Journal of Crystal Growth 329 (1), 67-70, 2011 | 80 | 2011 |
| Surface-passivation effects on the performance of 4H-SiC BJTs R Ghandi, B Buono, M Domeij, R Esteve, A Schöner, J Han, S Dimitrijev, ... IEEE Transactions on Electron Devices 58 (1), 259-265, 2010 | 80 | 2010 |
| Fundamental piezoresistive coefficients of p-type single crystalline 3C-SiC HP Phan, D Viet Dao, P Tanner, L Wang, NT Nguyen, Y Zhu, S Dimitrijev Applied Physics Letters 104 (11), 2014 | 79 | 2014 |
| Ultrathin Fe 2 O 3 nanoflakes using smart chemical stripping for high performance lithium storage Y Wang, J Han, X Gu, S Dimitrijev, Y Hou, S Zhang Journal of materials chemistry A 5 (35), 18737-18743, 2017 | 72 | 2017 |
| Transient-current method for measurement of active near-interface oxide traps in 4H-SiC MOS capacitors and MOSFETs HA Moghadam, S Dimitrijev, J Han, D Haasmann, A Aminbeidokhti IEEE Transactions on Electron Devices 62 (8), 2670-2674, 2015 | 63 | 2015 |
| Active defects in MOS devices on 4H-SiC: A critical review HA Moghadam, S Dimitrijev, J Han, D Haasmann Microelectronics Reliability 60, 1-9, 2016 | 61 | 2016 |
| Anchoring ultra-fine TiO 2–SnO 2 solid solution particles onto graphene by one-pot ball-milling for long-life lithium-ion batteries S Li, M Ling, J Qiu, J Han, S Zhang Journal of Materials Chemistry A 3 (18), 9700-9706, 2015 | 50 | 2015 |
| Experimental investigation of piezoresistive effect in p-type 4H–SiC TK Nguyen, HP Phan, T Dinh, J Han, S Dimitrijev, P Tanner, ARM Foisal, ... IEEE Electron Device Letters 38 (7), 955-958, 2017 | 47 | 2017 |
| Effects of nitrogen incorporation on the interfacial layer between thermally grown dielectric films and SiC SA Corrêa, C Radtke, GV Soares, L Miotti, IJR Baumvol, S Dimitrijev, ... Applied Physics Letters 94 (25), 2009 | 46 | 2009 |
| Photoelectrochemical Manifestation of Photoelectron Transport Properties of Vertically Aligned Nanotubular TiO2 Photoanodes H Zhang, H Zhao, S Zhang, X Quan ChemPhysChem 9 (1), 117-123, 2008 | 46 | 2008 |
| Robust TiO 2/BDD heterojunction photoanodes for determination of chemical oxygen demand in wastewaters Y Han, J Qiu, Y Miao, J Han, S Zhang, H Zhang, H Zhao Analytical methods 3 (9), 2003-2009, 2011 | 41 | 2011 |
| Description and verification of the fundamental current mechanisms in silicon carbide Schottky barrier diodes J Nicholls, S Dimitrijev, P Tanner, J Han Scientific reports 9 (1), 3754, 2019 | 38 | 2019 |
| Charge trapping properties of 3C-and 4H-SiC MOS capacitors with nitrided gate oxides R Arora, J Rozen, DM Fleetwood, KF Galloway, CX Zhang, J Han, ... Ieee transactions on nuclear science 56 (6), 3185-3191, 2009 | 32 | 2009 |
| The effect of device geometry and crystal orientation on the stress-dependent offset voltage of 3C–SiC (100) four terminal devices A Qamar, HP Phan, J Han, P Tanner, T Dinh, L Wang, S Dimitrijev, ... Journal of Materials Chemistry C 3 (34), 8804-8809, 2015 | 30 | 2015 |
