| Quantification of line-edge roughness of photoresists. II. Scaling and fractal analysis and the best roughness descriptors V Constantoudis, GP Patsis, A Tserepi, E Gogolides Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2003 | 150 | 2003 |
| Nanofabrication: techniques and principles M Stepanova, S Dew Springer Science & Business Media, 2011 | 144 | 2011 |
| Line edge roughness and critical dimension variation: Fractal characterization and comparison using model functions V Constantoudis, GP Patsis, LHA Leunissen, E Gogolides Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2004 | 137 | 2004 |
| A review of line edge roughness and surface nanotexture resulting from patterning processes E Gogolides, V Constantoudis, GP Patsis, A Tserepi Microelectronic Engineering 83 (4-9), 1067-1072, 2006 | 106 | 2006 |
| Quantification of line-edge roughness of photoresists. I. A comparison between off-line and on-line analysis of top-down scanning electron microscopy images GP Patsis, V Constantoudis, A Tserepi, E Gogolides, G Grozev Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2003 | 99 | 2003 |
| Effects of photoresist polymer molecular weight on line-edge roughness and its metrology probed with Monte Carlo simulations GP Patsis, V Constantoudis, E Gogolides Microelectronic engineering 75 (3), 297-308, 2004 | 66 | 2004 |
| Photoresist line-edge roughness analysis using scaling concepts V Constantoudis, GP Patsis, E Gogolides Journal of Micro/Nanolithography, MEMS and MOEMS 3 (3), 429-435, 2004 | 54 | 2004 |
| Line edge roughness: experimental results related to a two-parameter model LHA Leunissen, WG Lawrence, M Ercken Microelectronic engineering 73, 265-270, 2004 | 46 | 2004 |
| Roughness analysis of lithographically produced nanostructures: off-line measurement and scaling analysis GP Patsis, V Constantoudis, A Tserepi, E Gogolides, G Grozev, ... Microelectronic engineering 67, 319-325, 2003 | 36 | 2003 |
| Etching behavior of Si-containing polymers as resist materials for bilayer lithography: The case of poly-dimethyl siloxane A Tserepi, G Cordoyiannis, GP Patsis, V Constantoudis, E Gogolides, ... Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2003 | 34 | 2003 |
| Material and process effects on line-edge-roughness of photoresists probed with a fast stochastic lithography simulator GP Patsis, E Gogolides Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2005 | 32 | 2005 |
| Stochastic simulation studies of molecular resists D Drygiannakis, GP Patsis, I Raptis, D Niakoula, V Vidali, E Couladouros, ... Microelectronic engineering 84 (5-8), 1062-1065, 2007 | 31 | 2007 |
| Effects of model polymer chain architectures and molecular weight of conventional and chemically amplified photoresists on line-edge roughness. Stochastic simulations GP Patsis, E Gogolides Microelectronic engineering 83 (4-9), 1078-1081, 2006 | 30 | 2006 |
| Effects of different processing conditions on line-edge roughness for 193-nm and 157-nm resists M Ercken, LHA Leunissen, I Pollentier, GP Patsis, V Constantoudis, ... Metrology, Inspection, and Process Control for Microlithography XVIII 5375 …, 2004 | 30 | 2004 |
| Characterization and simulation of surface and line-edge roughness in photoresists V Constantoudis, E Gogolides, GP Patsis, A Tserepi, ES Valamontes Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2001 | 30 | 2001 |
| Line-edge-roughness transfer during plasma etching: modeling approaches and comparison with experimental results V Constantoudis, G Kokkoris, P Xydi, E Gogolides, E Pargon, M Martin Journal of Micro/Nanolithography, MEMS and MOEMS 8 (4), 043004-043004-8, 2009 | 29 | 2009 |
| Surface and line-edge roughness in solution and plasma developed negative tone resists: Experiment and simulation GP Patsis, A Tserepi, I Raptis, N Glezos, E Gogolides, ES Valamontes Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2000 | 29 | 2000 |
| Effects of photoresist polymer molecular weight and acid-diffusion on line-edge roughness GP Patsis, E Gogolides, K Van Werden Japanese journal of applied physics 44 (8R), 6341, 2005 | 28 | 2005 |
| Toward a complete description of linewidth roughness: a comparison of different methods for vertical and spatial LER and LWR analysis and CD variation V Constantoudis, GP Patsis, LHA Leunissen, E Gogolides Metrology, Inspection, and Process Control for Microlithography XVIII 5375 …, 2004 | 27 | 2004 |
| Photoresist line-edge roughness analysis using scaling concepts V Constantoudis, GP Patsis, E Gogolides Metrology, Inspection, and Process Control for Microlithography XVII 5038 …, 2003 | 27 | 2003 |
Evangelos GogolidesDirector of Research, Institute of Nanoscience and Nanotechnology, NCSR "Demokritos"Verified email at inn.demokritos.gr
