Follow
Dr. Androula Nassiopoulou
Dr. Androula Nassiopoulou
Director of Research, NCSR Demokritos, Institute of nanoscience &Nanotechnology
Verified email at inn.demokritos.gr
Title
Cited by
Cited by
Year
Encyclopedia of nanoscience and nanotechnology
AG Nassiopoulou, HS Nalwa
Nalwa, HS, Ed, 793-813, 2004
1702004
Novel C-MOS compatible monolithic silicon gas flow sensor with porous silicon thermal isolation
G Kaltsas, AG Nassiopoulou
Sensors and Actuators A: Physical 76 (1-3), 133-138, 1999
1661999
Charging effects in silicon nanocrystals within layers, fabricated by chemical vapor deposition, oxidation, and annealing
DN Kouvatsos, V Ioannou-Sougleridis, AG Nassiopoulou
Applied physics letters 82 (3), 397-399, 2003
1472003
Room- and low-temperature voltage tunable electroluminescence from a single layer of silicon quantum dots in between two thin layers
P Photopoulos, AG Nassiopoulou
Applied Physics Letters 77 (12), 1816-1818, 2000
1472000
Thermal properties of suspended porous silicon micro-hotplates for sensor applications
C Tsamis, AG Nassiopoulou, A Tserepi
Sensors and Actuators B: Chemical 95 (1-3), 78-82, 2003
1352003
Structural and electrical quality of the high-k dielectric on Si (001): Dependence on growth parameters
A Dimoulas, G Vellianitis, A Travlos, V Ioannou-Sougleridis, ...
Journal of Applied Physics 92 (1), 426-431, 2002
1352002
Photoluminescence from nanocrystalline silicon in Si/SiO2 superlattices
P Photopoulos, AG Nassiopoulou, DN Kouvatsos, A Travlos
Applied Physics Letters 76 (24), 3588-3590, 2000
1332000
Frontside bulk silicon micromachining using porous-silicon technology
G Kaltsas, AG Nassiopoulou
Sensors and Actuators A: Physical 65 (2-3), 175-179, 1998
941998
Characterization of a silicon thermal gas-flow sensor with porous silicon thermal isolation
G Kaltsas, AA Nassiopoulos, AG Nassiopoulou
IEEE Sensors Journal 2 (5), 463-475, 2002
832002
Si nanowires by a single-step metal-assisted chemical etching process on lithographically defined areas: formation kinetics
AG Nassiopoulou, V Gianneta, C Katsogridakis
Nanoscale research letters 6, 1-8, 2011
762011
Fundamental transport processes in ensembles of silicon quantum dots
I Balberg, E Savir, J Jedrzejewski, AG Nassiopoulou, S Gardelis
Physical Review B—Condensed Matter and Materials Physics 75 (23), 235329, 2007
732007
Porous silicon as an effective material for thermal isolation on bulk crystalline silicon
AG Nassiopoulou, G Kaltsas
physica status solidi (a) 182 (1), 307-311, 2000
732000
Ultra-thin porous anodic alumina films with self-ordered cylindrical vertical pores on a p-type silicon substrate
M Kokonou, AG Nassiopoulou, KP Giannakopoulos
Nanotechnology 16 (1), 103, 2004
622004
Dielectric properties of porous silicon for use as a substrate for the on-chip integration of millimeter-wave devices in the frequency range 140 to 210 GHz
P Sarafis, AG Nassiopoulou
Nanoscale research letters 9, 1-8, 2014
582014
Ultrafast transient photoinduced absorption in silicon nanocrystals: Coupling of oxygen-related states to quantized sublevels
E Lioudakis, A Othonos, AG Nassiopoulou
Applied physics letters 90 (17), 2007
552007
Stable Visible Photo‐ and Electroluminescence from Nanocrystalline Silicon Thin Films Fabricated on Thin SiO2 Layers by Low Pressure Chemical Vapour …
AG Nassiopoulou, V Ioannou‐Sougleridis, P Photopoulos, A Travlos, ...
physica status solidi (a) 165 (1), 79-85, 1998
521998
Fabrication and testing of an integrated thermal flow sensor employing thermal isolation by a porous silicon membrane over an air cavity
DN Pagonis, G Kaltsas, AG Nassiopoulou
Journal of micromechanics and microengineering 14 (6), 793, 2004
512004
High Seebeck coefficient of porous silicon: study of the porosity dependence
K Valalaki, P Benech, A Galiouna Nassiopoulou
Nanoscale research letters 11, 1-8, 2016
492016
Dielectric permittivity of porous Si for use as substrate material in Si-integrated RF devices
P Sarafis, E Hourdakis, AG Nassiopoulou
IEEE Transactions on electron devices 60 (4), 1436-1443, 2013
492013
Planar CMOS compatible process for the fabrication of buried microchannels in silicon, using porous-silicon technology
G Kaltsas, DN Pagonis, AG Nassiopoulou
Journal of microelectromechanical systems 12 (6), 863-872, 2003
482003
The system can't perform the operation now. Try again later.
Articles 1–20