Dr. Androula Nassiopoulou
Dr. Androula Nassiopoulou
Director of Research, NCSR Demokritos, Institute of nanoscience &Nanotechnology
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Novel C-MOS compatible monolithic silicon gas flow sensor with porous silicon thermal isolation
G Kaltsas, AG Nassiopoulou
Sensors and Actuators A: Physical 76 (1-3), 133-138, 1999
Room- and low-temperature voltage tunable electroluminescence from a single layer of silicon quantum dots in between two thin layers
P Photopoulos, AG Nassiopoulou
Applied Physics Letters 77 (12), 1816-1818, 2000
Charging effects in silicon nanocrystals within layers, fabricated by chemical vapor deposition, oxidation, and annealing
DN Kouvatsos, V Ioannou-Sougleridis, AG Nassiopoulou
Applied physics letters 82 (3), 397-399, 2003
Photoluminescence from nanocrystalline silicon in superlattices
P Photopoulos, AG Nassiopoulou, DN Kouvatsos, A Travlos
Applied Physics Letters 76 (24), 3588-3590, 2000
Structural and electrical quality of the high-k dielectric on Si (001): Dependence on growth parameters
A Dimoulas, G Vellianitis, A Travlos, V Ioannou-Sougleridis, ...
Journal of Applied Physics 92 (1), 426-431, 2002
Thermal properties of suspended porous silicon micro-hotplates for sensor applications
C Tsamis, AG Nassiopoulou, A Tserepi
Sensors and Actuators B: Chemical 95 (1-3), 78-82, 2003
Frontside bulk silicon micromachining using porous-silicon technology
G Kaltsas, AG Nassiopoulou
Sensors and Actuators A: Physical 65 (2-3), 175-179, 1998
Characterization of a silicon thermal gas-flow sensor with porous silicon thermal isolation
G Kaltsas, AA Nassiopoulos, AG Nassiopoulou
IEEE Sensors Journal 2 (5), 463-475, 2002
Porous silicon as an effective material for thermal isolation on bulk crystalline silicon
AG Nassiopoulou, G Kaltsas
physica status solidi (a) 182 (1), 307-311, 2000
Si nanowires by a single-step metal-assisted chemical etching process on lithographically defined areas: formation kinetics
AG Nassiopoulou, V Gianneta, C Katsogridakis
Nanoscale research letters 6, 1-8, 2011
Fundamental transport processes in ensembles of silicon quantum dots
I Balberg, E Savir, J Jedrzejewski, AG Nassiopoulou, S Gardelis
Physical review B 75 (23), 235329, 2007
Ultra-thin porous anodic alumina films with self-ordered cylindrical vertical pores on a p-type silicon substrate
M Kokonou, AG Nassiopoulou, KP Giannakopoulos
Nanotechnology 16 (1), 103, 2004
Dielectric properties of porous silicon for use as a substrate for the on-chip integration of millimeter-wave devices in the frequency range 140 to 210 GHz
P Sarafis, AG Nassiopoulou
Nanoscale research letters 9, 1-8, 2014
Ultrafast transient photoinduced absorption in silicon nanocrystals: Coupling of oxygen-related states to quantized sublevels
E Lioudakis, A Othonos, AG Nassiopoulou
Applied physics letters 90 (17), 2007
Stable Visible Photo‐ and Electroluminescence from Nanocrystalline Silicon Thin Films Fabricated on Thin SiO2 Layers by Low Pressure Chemical Vapourá…
AG Nassiopoulou, V Ioannou‐Sougleridis, P Photopoulos, A Travlos, ...
physica status solidi (a) 165 (1), 79-85, 1998
Fabrication and testing of an integrated thermal flow sensor employing thermal isolation by a porous silicon membrane over an air cavity
DN Pagonis, G Kaltsas, AG Nassiopoulou
Journal of micromechanics and microengineering 14 (6), 793, 2004
High Seebeck coefficient of porous silicon: study of the porosity dependence
K Valalaki, P Benech, A Galiouna Nassiopoulou
Nanoscale research letters 11, 1-8, 2016
Dielectric permittivity of porous Si for use as substrate material in Si-integrated RF devices
P Sarafis, E Hourdakis, AG Nassiopoulou
IEEE transactions on electron Devices 60 (4), 1436-1443, 2013
Planar CMOS compatible process for the fabrication of buried microchannels in silicon, using porous-silicon technology
G Kaltsas, DN Pagonis, AG Nassiopoulou
Journal of microelectromechanical systems 12 (6), 863-872, 2003
Photo-and electroluminescence from nanocrystalline silicon single and multilayer structures
P Photopoulos, AG Nassiopoulou, DN Kouvatsos, A Travlos
Materials Science and Engineering: B 69, 345-349, 2000
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