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Jun Wang
Jun Wang
Assistant Professor at the University of Nebraska-Lincoln
Verified email at unl.edu
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Cited by
Year
Gate driver design for 1.7 kV SiC MOSFET module with Rogowski current sensor for shortcircuit protection
J Wang, Z Shen, C DiMarino, R Burgos, D Boroyevich
2016 IEEE Applied Power Electronics Conference and Exposition (APEC), 516-523, 2016
1372016
Design of a high-bandwidth Rogowski current sensor for gate-drive shortcircuit protection of 1.7 kV SiC MOSFET power modules
J Wang, Z Shen, R Burgos, D Boroyevich
2015 IEEE 3rd Workshop on Wide Bandgap Power Devices and Applications (WiPDA …, 2015
1062015
Comparison and discussion on shortcircuit protections for silicon-carbide MOSFET modules: desaturation versus Rogowski switch-current sensor
S Mocevic, J Wang, R Burgos, D Boroyevich, M Jaksic, C Stancu, ...
IEEE Transactions on Industry Applications, 2020
952020
Integrated switch current sensor for shortcircuit protection and current control of 1.7-kV SiC MOSFET modules
J Wang, Z Shen, R Burgos, D Boroyevich
2016 IEEE Energy Conversion Congress and Exposition (ECCE), 1-7, 2016
932016
Switching-cycle state-space modeling and control of the modular multilevel converter
J Wang, R Burgos, D Boroyevich
IEEE Journal of Emerging and Selected Topics in Power Electronics 2 (4 …, 2014
902014
Development of a compact 750 kVA three-phase NPC three-level universal inverter module with specifically designed busbar
J Wang, B Yang, J Zhao, Y Deng, X He, X Zhixin
2010 IEEE Applied Power Electronics Conference and Exposition (APEC), 1266-1271, 2010
832010
High-scalability enhanced gate drivers for SiC MOSFET modules with transient immunity beyond 100 V/ns
J Wang, S Mocevic, R Burgos, D Boroyevich
IEEE Transactions on Power Electronics 35 (10), 10180-10199, 2020
792020
A survey on the modular multilevel converters—Modeling, modulation and controls
J Wang, R Burgos, D Boroyevich
2013 IEEE Energy Conversion Congress and Exposition, 3984-3991, 2013
782013
Design and testing of 1 kV H-bridge power electronics building block based on 1.7 kV SiC MOSFET module
J Wang, R Burgos, D Boroyevich, Z Liu
2018 International Power Electronics Conference (IPEC-Niigata 2018-ECCE Asia …, 2018
762018
Characterization and evaluation of the state-of-the-art 3.3-kV 400-A SiC MOSFETs
A Marzoughi, J Wang, R Burgos, D Boroyevich
IEEE Transactions on Industrial Electronics 64 (10), 8247-8257, 2017
682017
Design, analysis, and discussion of short circuit and overload gate-driver dual-protection scheme for 1.2-kV, 400-A SiC MOSFET modules
K Sun, J Wang, R Burgos, D Boroyevich
IEEE Transactions on Power Electronics, 2019
642019
Power-cell design and assessment methodology based on a high-current 10 kV SiC MOSFET half-bridge module
S Mocevic, J Yu, Y Xu, J Stewart, J Wang, I Cvetkovic, D Dong, R Burgos, ...
IEEE Journal of Emerging and Selected Topics in Power Electronics, 2020
622020
Busbar design for SiC-based H-bridge PEBB using 1.7 kV, 400 A SiC MOSFETs operating at 100 kHz
NR Mehrabadi, I Cvetkovic, J Wang, R Burgos, D Boroyevich
2016 IEEE Energy Conversion Congress and Exposition (ECCE), 1-7, 2016
622016
High-density current-transformer based gate-drive power supply with reinforced isolation for 10 kV SiC MOSFET modules
J Hu, J Wang, R Burgos, B Wen, D Boroyevich
IEEE Journal of Emerging and Selected Topics in Power Electronics, 2019
612019
Comparison between desaturation sensing and Rogowski coil current sensing for shortcircuit protection of 1.2 kV, 300 A SiC MOSFET module
S Mocevic, J Wang, R Burgos, D Boroyevich, C Stancu, M Jaksic, ...
2018 IEEE Applied Power Electronics Conference and Exposition (APEC), 2666-2672, 2018
602018
DC circuit breakers: A technology development status survey
S Zheng, R Kheirollahi, J Pan, L Xue, J Wang, F Lu
IEEE Transactions on Smart Grid, 2021
562021
Power electronics building block (PEBB) design based on 1.7 kV SiC MOSFET Modules
J Wang, Z Shen, I Cvetkovic, NR Mehrabadi, A Marzoughi, S Ohn, J Yu, ...
2017 IEEE Electric Ship Technologies Symposium (ESTS), 612-619, 2017
522017
Design of a 10 kV SiC MOSFET-based high-density, high-efficiency, modular medium-voltage power converter
S Mocevic, J Yu, B Fan, K Sun, Y Xu, J Stewart, Y Rong, H Song, ...
IEnergy 1 (1), 100-113, 2022
512022
Gate-driver integrated junction temperature estimation of SiC MOSFET modules
S Mocevic, V Mitrovic, J Wang, R Burgos, D Boroyevich
IEEE Journal of Emerging and Selected Topics in Power Electronics, 2021
382021
A high-speed gate driver with PCB-embedded Rogowski switch-current sensor for a 10 kV, 240 A, SiC MOSFET module
J Wang, S Mocevic, Y Xu, C DiMarino, R Burgos, D Boroyevich
2018 IEEE Energy Conversion Congress and Exposition (ECCE), 5489-5494, 2018
382018
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