Cheol Seong Hwang
Cheol Seong Hwang
Professor, Department of Materials Science and Engineering, Seoul National University
Verified email at - Homepage
Cited by
Cited by
Atomic structure of conducting nanofilaments in TiO2 resistive switching memory
DH Kwon, KM Kim, JH Jang, JM Jeon, MH Lee, GH Kim, XS Li, GS Park, ...
Nature nanotechnology 5 (2), 148-153, 2010
Multifunctional wearable devices for diagnosis and therapy of movement disorders
D Son, J Lee, S Qiao, R Ghaffari, J Kim, JE Lee, C Song, SJ Kim, DJ Lee, ...
Nature nanotechnology 9 (5), 397-404, 2014
Resistive switching mechanism of TiO2 thin films grown by atomic-layer deposition
BJ Choi, DS Jeong, SK Kim, C Rohde, S Choi, JH Oh, HJ Kim, CS Hwang, ...
Journal of applied physics 98 (3), 2005
Emerging memories: resistive switching mechanisms and current status
DS Jeong, R Thomas, RS Katiyar, JF Scott, H Kohlstedt, A Petraru, ...
Reports on progress in physics 75 (7), 076502, 2012
Ferroelectricity and Antiferroelectricity of Doped Thin HfO2‐Based Films
MH Park, YH Lee, HJ Kim, YJ Kim, T Moon, KD Kim, J Mueller, A Kersch, ...
Advanced Materials 27 (11), 1811-1831, 2015
Resistive switching materials for information processing
Z Wang, H Wu, GW Burr, CS Hwang, KL Wang, Q Xia, JJ Yang
Nature Reviews Materials 5 (3), 173-195, 2020
Nanofilamentary resistive switching in binary oxide system; a review on the present status and outlook
KM Kim, DS Jeong, CS Hwang
Nanotechnology 22 (25), 254002, 2011
Evolution of phases and ferroelectric properties of thin Hf0. 5Zr0. 5O2 films according to the thickness and annealing temperature
M Hyuk Park, H Joon Kim, Y Jin Kim, W Lee, T Moon, C Seong Hwang
Applied Physics Letters 102 (24), 2013
Anode-interface localized filamentary mechanism in resistive switching of TiO2 thin films
KM Kim, BJ Choi, YC Shin, S Choi, CS Hwang
Applied physics letters 91 (1), 2007
A Resistive Memory in Semiconducting BiFeO3 Thin‐Film Capacitors
AQ Jiang, C Wang, KJ Jin, XB Liu, JF Scott, CS Hwang, TA Tang, HB Lu, ...
Advanced Materials 23 (10), 1277-1281, 2011
Review and perspective on ferroelectric HfO2-based thin films for memory applications
MH Park, YH Lee, T Mikolajick, U Schroeder, CS Hwang
Mrs Communications 8 (3), 795-808, 2018
The effects of crystallographic orientation and strain of thin Hf0. 5Zr0. 5O2 film on its ferroelectricity
M Hyuk Park, H Joon Kim, Y Jin Kim, T Moon, C Seong Hwang
Applied Physics Letters 104 (7), 2014
Identification of a determining parameter for resistive switching of TiO2 thin films
C Rohde, BJ Choi, DS Jeong, S Choi, JS Zhao, CS Hwang
Applied Physics Letters 86 (26), 2005
High dielectric constant TiO2 thin films on a Ru electrode grown at 250 C by atomic-layer deposition
SK Kim, WD Kim, KM Kim, CS Hwang, J Jeong
Applied Physics Letters 85 (18), 4112-4114, 2004
A review of three‐dimensional resistive switching cross‐bar array memories from the integration and materials property points of view
JY Seok, SJ Song, JH Yoon, KJ Yoon, TH Park, DE Kwon, H Lim, GH Kim, ...
Advanced Functional Materials 24 (34), 5316-5339, 2014
First-principles study on doping and phase stability of
CK Lee, E Cho, HS Lee, CS Hwang, S Han
Physical Review B—Condensed Matter and Materials Physics 78 (1), 012102, 2008
Memristors for energy‐efficient new computing paradigms
DS Jeong, KM Kim, S Kim, BJ Choi, CS Hwang
Advanced Electronic Materials 2 (9), 1600090, 2016
An artificial nociceptor based on a diffusive memristor
JH Yoon, Z Wang, KM Kim, H Wu, V Ravichandran, Q Xia, CS Hwang, ...
Nature communications 9 (1), 417, 2018
Al‐Doped TiO2 Films with Ultralow Leakage Currents for Next Generation DRAM Capacitors
SK Kim, GJ Choi, SY Lee, M Seo, SW Lee, JH Han, HS Ahn, S Han, ...
Advanced Materials 20 (8), 1429-1435, 2008
Deposition of extremely thin (Ba,Sr)TiO3 thin films for ultra‐large‐scale integrated dynamic random access memory application
CS Hwang, SO Park, HJ Cho, CS Kang, HK Kang, SI Lee, MY Lee
Applied physics letters 67 (19), 2819-2821, 1995
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