Theo dõi
V.P. Markevich
V.P. Markevich
Email được xác minh tại manchester.ac.uk
Tiêu đề
Trích dẫn bởi
Trích dẫn bởi
Năm
Experimental evidence of the oxygen dimer in silicon
LI Murin, T Hallberg, VP Markevich, JL Lindström
Physical review letters 80 (1), 93, 1998
1651998
Vacancy–group-V-impurity atom pairs in Ge crystals doped with P, As, Sb, and Bi
VP Markevich, ID Hawkins, AR Peaker, KV Emtsev, VV Emtsev, ...
Physical Review B 70 (23), 235213, 2004
1462004
Tutorial: Junction spectroscopy techniques and deep-level defects in semiconductors
AR Peaker, VP Markevich, J Coutinho
Journal of Applied Physics 123 (16), 2018
1162018
Hydrogen–oxygen interaction in silicon at around 50 C
VP Markevich, M Suezawa
Journal of applied physics 83 (6), 2988-2993, 1998
1131998
Thermal activation and deactivation of grown‐in defects limiting the lifetime of float‐zone silicon
NE Grant, VP Markevich, J Mullins, AR Peaker, F Rougieux, D Macdonald
physica status solidi (RRL)–Rapid Research Letters 10 (6), 443-447, 2016
1082016
I6nterstitial carbon-oxygen center and hydrogen related shallow thermal donors in Si
J Coutinho, R Jones, PR Briddon, S Öberg, LI Murin, VP Markevich, ...
Physical Review B 65 (1), 014109, 2001
1022001
Defect engineering in Czochralski silicon by electron irradiation at different temperatures
JL Lindström, LI Murin, T Hallberg, VP Markevich, BG Svensson, ...
Nuclear Instruments and Methods in Physics Research Section B: Beam …, 2002
972002
Defect reactions associated with divacancy elimination in silicon
VP Markevich, AR Peaker, SB Lastovskii, LI Murin, JL Lindström
Journal of Physics: Condensed Matter 15 (39), S2779, 2003
922003
Electronic properties of antimony-vacancy complex in Ge crystals
VP Markevich, AR Peaker, VV Litvinov, VV Emtsev, LI Murin
Journal of Applied Physics 95 (8), 4078-4083, 2004
912004
Permanent annihilation of thermally activated defects which limit the lifetime of float‐zone silicon
NE Grant, VP Markevich, J Mullins, AR Peaker, F Rougieux, D Macdonald, ...
physica status solidi (a) 213 (11), 2844-2849, 2016
862016
Trivacancy and trivacancy-oxygen complexes in silicon: Experiments and ab initio modeling
VP Markevich, AR Peaker, SB Lastovskii, LI Murin, J Coutinho, VJB Torres, ...
Physical Review B 80 (23), 235207, 2009
852009
Electronic properties of vacancy–oxygen complex in Ge crystals
VP Markevich, ID Hawkins, AR Peaker, VV Litvinov, LI Murin, ...
Applied Physics Letters 81 (10), 1821-1823, 2002
762002
Electrical and optical characterization of thermal donors in silicon
YAI Latushko, LF Makarenko, VP Markevich, LI Murin
physica status solidi (a) 93 (2), K181-K184, 1986
651986
The oxygen dimer in Si: Its relationship to the light-induced degradation of Si solar cells?
LI Murin, EA Tolkacheva, VP Markevich, AR Peaker, B Hamilton, ...
Applied Physics Letters 98 (18), 2011
622011
Gettering of interstitial iron in silicon by plasma-enhanced chemical vapour deposited silicon nitride films
AY Liu, C Sun, VP Markevich, AR Peaker, JD Murphy, D MacDonald
Journal of Applied Physics 120 (19), 2016
602016
Graphene oxide films for field effect surface passivation of silicon for solar cells
M Vaqueiro-Contreras, C Bartlam, RS Bonilla, VP Markevich, MP Halsall, ...
Solar Energy Materials and Solar Cells 187, 189-193, 2018
562018
Identification of the mechanism responsible for the boron oxygen light induced degradation in silicon photovoltaic cells
M Vaqueiro-Contreras, VP Markevich, J Coutinho, P Santos, IF Crowe, ...
Journal of Applied Physics 125 (18), 2019
552019
Radiation‐induced shallow donors in Czochralski‐grown silicon crystals saturated with hydrogen
VP Markevich, M Suezawa, K Sumino, LI Murin
Journal of applied physics 76 (11), 7347-7350, 1994
551994
Structure and electronic properties of trivacancy and trivacancy‐oxygen complexes in silicon
VP Markevich, AR Peaker, B Hamilton, SB Lastovskii, LI Murin, J Coutinho, ...
physica status solidi (a) 208 (3), 568-571, 2011
522011
Recombination via point defects and their complexes in solar silicon
AR Peaker, VP Markevich, B Hamilton, G Parada, A Dudas, A Pap, E Don, ...
physica status solidi (a) 209 (10), 1884-1893, 2012
512012
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