Xuezhe Yu
Xuezhe Yu
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Controlled synthesis of phase-pure InAs nanowires on Si (111) by diminishing the diameter to 10 nm
D Pan, M Fu, X Yu, X Wang, L Zhu, S Nie, S Wang, Q Chen, P Xiong, ...
Nano letters 14 (3), 1214-1220, 2014
Evidence for structural phase transitions induced by the triple phase line shift in self-catalyzed GaAs nanowires
X Yu, H Wang, J Lu, J Zhao, J Misuraca, P Xiong, S von Molnár
Nano letters 12 (10), 5436-5442, 2012
Near Full-Composition-Range High-Quality GaAs1–xSbx Nanowires Grown by Molecular-Beam Epitaxy
L Li, D Pan, Y Xue, X Wang, M Lin, D Su, Q Zhang, X Yu, H So, D Wei, ...
Nano letters 17 (2), 622-630, 2017
Free-standing two-dimensional single-crystalline InSb nanosheets
D Pan, DX Fan, N Kang, JH Zhi, XZ Yu, HQ Xu, JH Zhao
Nano letters 16 (2), 834-841, 2016
Perpendicularly magnetized τ-MnAl (001) thin films epitaxied on GaAs
SH Nie, LJ Zhu, J Lu, D Pan, HL Wang, XZ Yu, JX Xiao, JH Zhao
Applied Physics Letters 102 (15), 2013
All zinc-blende GaAs/(Ga, Mn) As core–shell nanowires with ferromagnetic ordering
X Yu, H Wang, D Pan, J Zhao, J Misuraca, S von Molnár, P Xiong
Nano letters 13 (4), 1572-1577, 2013
Robust manipulation of magnetism in dilute magnetic semiconductor (Ga, Mn) As by organic molecules
X Wang, H Wang, D Pan, L Li, X Yu, J Lu, J Zhao, T Keiper, E Lochner, ...
2016 IEEE International Nanoelectronics Conference (INEC), 1-3, 2016
Inversion Boundary Annihilation in GaAs Monolithically Grown on On‐Axis Silicon (001)
K Li, J Yang, Y Lu, M Tang, P Jurczak, Z Liu, X Yu, JS Park, H Deng, H Jia, ...
Advanced Optical Materials 8 (22), 2000970, 2020
Two-step fabrication of self-catalyzed Ga-based semiconductor nanowires on Si by molecular-beam epitaxy
X Yu, L Li, H Wang, J Xiao, C Shen, D Pan, J Zhao
Nanoscale 8 (20), 10615-10621, 2016
Growth and fabrication of high‐quality single nanowire devices with radial p‐i‐n junctions
Y Zhang, AM Sanchez, M Aagesen, S Huo, HA Fonseka, JA Gott, D Kim, ...
Small 15 (3), 1803684, 2019
III–V ternary nanowires on Si substrates: growth, characterization and device applications
G Boras, X Yu, H Liu
Journal of Semiconductors 40 (10), 101301, 2019
Preferred growth direction of III–V nanowires on differently oriented Si substrates
H Zeng, X Yu, HA Fonseka, G Boras, P Jurczak, T Wang, AM Sanchez, ...
Nanotechnology 31 (47), 475708, 2020
Quantitative determination of the Mn site distribution in ultrathin As layers with high critical temperatures: A Rutherford backscattering channeling …
D Benzeggouta, K Khazen, I Vickridge, HJ Von Bardeleben, L Chen, ...
Physical Review B 89 (11), 115323, 2014
Low threading dislocation density and antiphase boundary free GaAs epitaxially grown on on-axis Si (001) substrates
J Yang, K Li, H Jia, H Deng, X Yu, P Jurczak, JS Park, S Pan, W Li, ...
Nanoscale 14 (46), 17247-17253, 2022
Optimizing GaAs nanowire-based visible-light photodetectors
X Li, X Yu, H Zeng, G Boras, K Shen, Y Zhang, J Wu, KL Choy, H Liu
Applied Physics Letters 119 (5), 2021
Bias current dependence of the spin lifetime in insulating Al0. 3Ga0. 7As
J Misuraca, JI Kim, J Lu, K Meng, L Chen, X Yu, J Zhao, P Xiong, ...
Applied Physics Letters 104 (8), 2014
Self-catalyzed AlGaAs nanowires and AlGaAs/GaAs nanowire-quantum dots on Si substrates
G Boras, X Yu, HA Fonseka, G Davis, AV Velichko, JA Gott, H Zeng, S Wu, ...
The Journal of Physical Chemistry C 125 (26), 14338-14347, 2021
Growth mechanisms for InAs/GaAs QDs with and without Bi surfactants
XY Chen, Y Gu, YJ Ma, SM Chen, MC Tang, YY Zhang, XZ Yu, P Wang, ...
Materials Research Express 6 (1), 015046, 2018
Magnetic properties of Fe0. 4Mn0. 6/Co2FeAl bilayers grown on GaAs by molecular-beam epitaxy
KK Meng, SH Nie, XZ Yu, SL Wang, WS Yan, JH Zhao
Journal of Applied Physics 110 (9), 2011
Hybrid III–V/IV nanowires: high-quality Ge shell epitaxy on GaAs cores
H Zeng, X Yu, HA Fonseka, JA Gott, M Tang, Y Zhang, G Boras, J Xu, ...
Nano Letters 18 (10), 6397-6403, 2018
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