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Yingqiu Zhou
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Year
Ultrathin 2D Photodetectors Utilizing Chemical Vapor Deposition Grown WS2 With Graphene Electrodes
H Tan, Y Fan, Y Zhou, Q Chen, W Xu, JH Warner
ACS nano 10 (8), 7866-7873, 2016
3162016
Lateral Graphene‐Contacted Vertically Stacked WS2/MoS2 Hybrid Photodetectors with Large Gain
H Tan, W Xu, Y Sheng, CS Lau, Y Fan, Q Chen, M Tweedie, X Wang, ...
Advanced Materials 29 (46), 1702917, 2017
1362017
Revealing Defect-State Photoluminescence in Monolayer WS2 by Cryogenic Laser Processing
Z He, X Wang, W Xu, Y Zhou, Y Sheng, Y Rong, JM Smith, JH Warner
ACS nano 10 (6), 5847-5855, 2016
1142016
High Photoresponsivity in Ultrathin 2D Lateral Graphene:WS2:Graphene Photodetectors Using Direct CVD Growth
T Chen, Y Sheng, Y Zhou, R Chang, X Wang, H Huang, Q Zhang, L Hou, ...
ACS applied materials & interfaces 11 (6), 6421-6430, 2019
862019
Photoinduced Schottky Barrier Lowering in 2D Monolayer WS2 Photodetectors
Y Fan, Y Zhou, X Wang, H Tan, Y Rong, JH Warner
Advanced Optical Materials 4 (10), 1573-1581, 2016
792016
Biexciton formation in bilayer tungsten disulfide
Z He, W Xu, Y Zhou, X Wang, Y Sheng, Y Rong, S Guo, J Zhang, ...
ACS nano 10 (2), 2176-2183, 2016
762016
Doping Graphene Transistors Using Vertical Stacked Monolayer WS2 Heterostructures Grown by Chemical Vapor Deposition
H Tan, Y Fan, Y Rong, B Porter, CS Lau, Y Zhou, Z He, S Wang, ...
ACS applied materials & interfaces 8 (3), 1644-1652, 2016
742016
Photoluminescence segmentation within individual hexagonal monolayer tungsten disulfide domains grown by chemical vapor deposition
Y Sheng, X Wang, K Fujisawa, S Ying, AL Elias, Z Lin, W Xu, Y Zhou, ...
ACS applied materials & interfaces 9 (17), 15005-15014, 2017
672017
Hydrogen-Assisted Growth of Large-Area Continuous Films of MoS2 on Monolayer Graphene
T Chen, Y Zhou, Y Sheng, X Wang, S Zhou, JH Warner
ACS applied materials & interfaces 10 (8), 7304-7314, 2018
532018
Utilizing Interlayer Excitons in Bilayer WS2 for Increased Photovoltaic Response in Ultrathin Graphene Vertical Cross-Bar Photodetecting Tunneling Transistors
Y Zhou, H Tan, Y Sheng, Y Fan, W Xu, JH Warner
ACS nano 12 (5), 4669-4677, 2018
462018
Chemical Vapor Deposition Growth of Two-Dimensional Monolayer Gallium Sulfide Crystals Using Hydrogen Reduction of Ga2S3
X Wang, Y Sheng, RJ Chang, JK Lee, Y Zhou, S Li, T Chen, H Huang, ...
ACS omega 3 (7), 7897-7903, 2018
442018
High-performance all 2D-layered tin disulfide: Graphene photodetecting transistors with thickness-controlled interface dynamics
RJ Chang, H Tan, X Wang, B Porter, T Chen, Y Sheng, Y Zhou, H Huang, ...
ACS applied materials & interfaces 10 (15), 13002-13010, 2018
392018
Symmetry-Controlled Reversible Photovoltaic Current Flow in Ultrathin All 2D Vertically Stacked Graphene/MoS2/WS2/Graphene Devices
Y Zhou, W Xu, Y Sheng, H Huang, Q Zhang, L Hou, V Shautsova, ...
ACS applied materials & interfaces 11 (2), 2234-2242, 2019
352019
Controlling Photoluminescence Enhancement and Energy Transfer in WS2:hBN:WS2 Vertical Stacks by Precise Interlayer Distances
W Xu, D Kozawa, Y Zhou, Y Wang, Y Sheng, T Jiang, MS Strano, ...
Small 16 (3), 1905985, 2020
332020
Revealing strain-induced effects in ultrathin heterostructures at the nanoscale
SG Sarwat, M Tweedie, BF Porter, Y Zhou, Y Sheng, J Mol, J Warner, ...
Nano letters 18 (4), 2467-2474, 2018
302018
2D-Layer-Dependent Behavior in Lateral Au/WS2/Graphene Photodiode Devices with Optical Modulation of Schottky Barriers
H Huang, Y Sheng, Y Zhou, Q Zhang, L Hou, T Chen, RJ Chang, ...
ACS Applied nano materials 1 (12), 6874-6881, 2018
242018
UV-induced SiC nanowire sensors
G Peng, Y Zhou, Y He, X Yu, XA Zhang, GY Li, H Haick
Journal of Physics D: Applied Physics 48 (5), 055102, 2015
232015
Super-resolution nanolithography of two-dimensional materials by anisotropic etching
DR Danielsen, A Lyksborg-Andersen, KES Nielsen, BS Jessen, TJ Booth, ...
ACS Applied Materials & Interfaces 13 (35), 41886-41894, 2021
212021
Grain Boundaries as Electrical Conduction Channels in Polycrystalline Monolayer WS2
Y Zhou, SG Sarwat, GS Jung, MJ Buehler, H Bhaskaran, JH Warner
ACS applied materials & interfaces 11 (10), 10189-10197, 2019
192019
Electrical Breakdown of Suspended Mono- and Few-Layer Tungsten Disulfide via Sulfur Depletion Identified by in Situ Atomic Imaging
Y Fan, AW Robertson, Y Zhou, Q Chen, X Zhang, ND Browning, H Zheng, ...
ACS nano 11 (9), 9435-9444, 2017
182017
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