| The influence of deposition temperature and annealing temperature on Ga-doped SnO2 films prepared by direct current magnetron sputtering HP Dang, QH Luc, T Le Journal of Alloys and Compounds 687, 1012-1020, 2016 | 50 | 2016 |
| Electrical Characteristics of n, p-In0.53Ga0.47As MOSCAPs With In Situ PEALD-AlN Interfacial Passivation Layer QH Luc, EY Chang, HD Trinh, YC Lin, HQ Nguyen, YY Wong, HB Do, ... IEEE Transactions on electron devices 61 (8), 2774-2778, 2014 | 45 | 2014 |
| High-performance normally-OFF GaN MIS-HEMTs using hybrid ferroelectric charge trap gate stack (FEG-HEMT) for power device applications CH Wu, PC Han, SC Liu, TE Hsieh, FJ Lumbantoruan, YH Ho, JY Chen, ... IEEE Electron Device Letters 39 (7), 991-994, 2018 | 37 | 2018 |
| Plasma Enhanced Atomic Layer Deposition Passivated HfO2/AlN/In0.53Ga0.47As MOSCAPs With Sub-Nanometer Equivalent Oxide Thickness and Low Interface … QH Luc, HB Do, MTH Ha, CC Hu, YC Lin, EY Chang IEEE Electron Device Letters 36 (12), 1277-1280, 2015 | 35 | 2015 |
| Normally-OFF GaN MIS-HEMT With F− Doped Gate Insulator Using Standard Ion Implantation CH Wu, PC Han, QH Luc, CY Hsu, TE Hsieh, HC Wang, YK Lin, ... IEEE Journal of the Electron Devices Society 6, 893-899, 2018 | 34 | 2018 |
| Normally-Off Tri-Gate GaN MIS-HEMTs with 0.76 mΩ·cm2 Specific On-Resistance for Power Device Applications CH Wu, JY Chen, PC Han, MW Lee, KS Yang, HC Wang, PC Chang, ... IEEE Transactions on Electron Devices 66 (8), 3441-3446, 2019 | 32 | 2019 |
| High-Performance GaN MOSHEMTs Fabricated With ALD Al2O3 Dielectric and NBE Gate Recess Technology for High Frequency Power Applications YK Lin, S Noda, CC Huang, HC Lo, CH Wu, QH Luc, PC Chang, HT Hsu, ... IEEE Electron Device Letters 38 (6), 771-774, 2017 | 32 | 2017 |
| A study of structural, electrical, and optical properties of p-type Zn-doped SnO2 films versus deposition and annealing temperature T Le, HP Dang, QH Luc Journal of Physics D: Applied Physics 50 (14), 145102, 2017 | 28 | 2017 |
| Effects of In-Situ Plasma-Enhanced Atomic Layer Deposition Treatment on the Performance of HfO2/In0.53Ga0.47As Metal–Oxide–Semiconductor Field-Effect … QH Luc, SP Cheng, PC Chang, HB Do, JH Chen, MTH Ha, SH Huynh, ... IEEE Electron Device Letters 37 (8), 974-977, 2016 | 27 | 2016 |
| Demonstration of Highly Robust 5 nm Hf0. 5Zr0. 5O₂ Ultra-Thin Ferroelectric Capacitor by Improving Interface Quality YK Liang, JS Wu, CY Teng, HL Ko, QH Luc, CJ Su, EY Chang, CH Lin IEEE Electron Device Letters 42 (9), 1299-1302, 2021 | 25 | 2021 |
| AlGaN/GaN MIS-HEMTs With High Quality ALD-Al2O3 Gate Dielectric Using Water and Remote Oxygen Plasma As Oxidants HC Wang, TE Hsieh, YC Lin, QH Luc, SC Liu, CH Wu, CF Dee, BY Majlis, ... IEEE Journal of the Electron Devices Society 6, 110-115, 2017 | 25 | 2017 |
| Studying the influence of deposition temperature and nitrogen contents on the structural, optical, and electrical properties of N-doped SnO2 films prepared by direct current … TT Nguyen, HP Dang, QH Luc, T Le Ceramics International 45 (7), 9147-9156, 2019 | 23 | 2019 |
| First Experimental Demonstration of Negative Capacitance InGaAs MOSFETs With Hf0.5Zr0.5O2Ferroelectric Gate Stack QH Luc, CC Fan-Chiang, SH Huynh, P Huang, HB Do, MTH Ha, YD Jin, ... 2018 IEEE Symposium on VLSI Technology, 47-48, 2018 | 22 | 2018 |
| In0.53Ga0.47As FinFET and GAA-FET With Remote-Plasma Treatment QH Luc, KS Yang, JW Lin, CC Chang, HB Do, SH Huynh, MTH Ha, ... IEEE Electron Device Letters 39 (3), 339-342, 2018 | 20 | 2018 |
| AlGaN/GaN HEMTs with damage-free neutral beam etched gate recess for high-performance millimeter-wave applications YK Lin, S Noda, HC Lo, SC Liu, CH Wu, YY Wong, QH Luc, PC Chang, ... IEEE Electron Device Letters 37 (11), 1395-1398, 2016 | 19 | 2016 |
| The optimum fabrication condition of p-type antimony tin oxide thin films prepared by DC magnetron sputtering HP Dang, QH Luc, T Le, VH Le Journal of Nanomaterials 2016, 2016 | 19 | 2016 |
| Electrical Characteristics of MOSCAPs and the Effect of Postdeposition Annealing Temperatures HD Trinh, YC Lin, EY Chang, CT Lee, SY Wang, HQ Nguyen, YS Chiu, ... IEEE transactions on electron devices 60 (5), 1555-1560, 2013 | 19 | 2013 |
| Eliminating the charge compensation effect in Ga-doped SnO2 films by N doping HP Dang, QH Luc, TT Nguyen, T Le Journal of Alloys and Compounds 776, 276-286, 2019 | 18 | 2019 |
| Impact of interfacial misfit dislocation growth mode on highly lattice-mismatched InxGa1-xSb epilayer grown on GaAs substrate by metalorganic chemical vapor deposition SH Huynh, MTH Ha, HB Do, QH Luc, HW Yu, EY Chang Applied Physics Letters 109 (10), 2016 | 17 | 2016 |
| Effect of Sn-substituted Ga and In dopant content on the structural, electrical, and optical properties of p-type X-doped SnO2 (X= Ga and In) films: Testing the photoelectronic … T Le, HP Dang, AQ Duong, QH Luc Journal of Photochemistry and Photobiology A: Chemistry 376, 88-99, 2019 | 15 | 2019 |
Do, Huy BinhPh. D,Lecturer, HCMC University of Technology and EducationVerified email at hcmute.edu.vn
