Shape Evolution of Monolayer MoS2 Crystals Grown by Chemical Vapor Deposition S Wang, Y Rong, Y Fan, M Pacios, H Bhaskaran, K He, JH Warner Chemistry of Materials 26 (22), 6371-6379, 2014 | 910 | 2014 |
All Chemical Vapor Deposition Growth of MoS2:h-BN Vertical van der Waals Heterostructures S Wang, X Wang, JH Warner ACS nano 9 (5), 5246-5254, 2015 | 420 | 2015 |
Atomic structure of defects and dopants in 2D layered transition metal dichalcogenides S Wang, A Robertson, JH Warner Chemical Society Reviews, 2018 | 236 | 2018 |
Detailed Atomic Reconstruction of Extended Line Defects in Monolayer MoS2 S Wang, GD Lee, S Lee, E Yoon, JH Warner ACS nano 10 (5), 5419-5430, 2016 | 199 | 2016 |
Controlling sulphur precursor addition for large single crystal domains of WS 2 Y Rong, Y Fan, AL Koh, AW Robertson, K He, S Wang, H Tan, R Sinclair, ... Nanoscale 6 (20), 12096-12103, 2014 | 194 | 2014 |
Atomically Sharp Crack Tips in Monolayer MoS2 and Their Enhanced Toughness by Vacancy Defects S Wang, Z Qin, GS Jung, FJ Martin-Martinez, K Zhang, MJ Buehler, ... ACS nano 10 (11), 9831-9839, 2016 | 150 | 2016 |
Atomic Structure and Dynamics of Single Platinum Atom Interactions with Monolayer MoS2 H Li, S Wang, H Sawada, GGD Han, T Samuels, CS Allen, AI Kirkland, ... ACS nano 11 (3), 3392-3403, 2017 | 146 | 2017 |
Edge-Enriched 2D MoS2 Thin Films Grown by Chemical Vapor Deposition for Enhanced Catalytic Performance S Li, S Wang, MM Salamone, AW Robertson, S Nayak, H Kim, SCE Tsang, ... ACS Catalysis 7, 877-886, 2016 | 143 | 2016 |
Electric‐Field‐Assisted Growth of Vertical Graphene Arrays and the Application in Thermal Interface Materials S Xu, S Wang, Z Chen, Y Sun, Z Gao, H Zhang, J Zhang Advanced Functional Materials 30 (34), 2003302, 2020 | 123 | 2020 |
Atomic Structure and Spectroscopy of Single Metal (Cr, V) Substitutional Dopants in Monolayer MoS2 AW Robertson, YC Lin, S Wang, H Sawada, CS Allen, Q Chen, S Lee, ... ACS nano 10 (11), 10227-10236, 2016 | 117 | 2016 |
Substrate control for large area continuous films of monolayer MoS2 by atmospheric pressure chemical vapor deposition S Wang, M Pacios, H Bhaskaran, JH Warner Nanotechnology 27 (8), 085604, 2016 | 117 | 2016 |
Large Dendritic Monolayer MoS2 Grown by Atmospheric Pressure Chemical Vapor Deposition for Electrocatalysis W Xu, S Li, S Zhou, JK Lee, S Wang, SG Sarwat, X Wang, H Bhaskaran, ... ACS applied materials & interfaces, 2018 | 95 | 2018 |
Synthesis and Transport Properties of Degenerate P-Type Nb-Doped WS2 Monolayers Y Jin, Z Zeng, Z Xu, YC Lin, K Bi, G Shao, TS Hu, S Wang, S Li, ... Chem. Mater. 31 (9), 3534-3541, 2019 | 87 | 2019 |
Growth of Large Single-Crystalline Monolayer Hexagonal Boron Nitride by Oxide-Assisted Chemical Vapor Deposition RJ Chang, X Wang, S Wang, Y Sheng, B Porter, H Bhaskaran, JH Warner Chemistry of Materials, 2017 | 77 | 2017 |
Doping Graphene Transistors Using Vertical Stacked Monolayer WS2 Heterostructures Grown by Chemical Vapor Deposition H Tan, Y Fan, Y Rong, B Porter, CS Lau, Y Zhou, Z He, S Wang, ... ACS applied materials & interfaces 8 (3), 1644-1652, 2016 | 77 | 2016 |
Atomically Flat Zigzag Edges in Monolayer MoS2 by Thermal Annealing Q Chen, H Li, W Xu, S Wang, H Sawada, CS Allen, AI Kirkland, ... Nano Letters, 2017 | 76 | 2017 |
Ultrafast carrier transfer promoted by interlayer coulomb coupling in 2D/3D perovskite heterostructures K Wei, T Jiang, Z Xu, J Zhou, J You, Y Tang, H Li, R Chen, X Zheng, ... Laser & Photonics Reviews 12 (10), 1800128, 2018 | 68 | 2018 |
Determining the Optimized Interlayer Separation Distance in Vertical Stacked 2D WS2: hBN: MoS2 Heterostructures for Exciton Energy Transfer W Xu, D Kozawa, Y Liu, Y Sheng, K Wei, VB Koman, S Wang, X Wang, ... Small, 2018 | 66 | 2018 |
Growth of Large-Area Homogeneous Monolayer Transition Metal Disulfides via a Molten Liquid Intermediate Process H Liu, G Qi, C Tang, M Chen, Y Chen, Z Shu, H Xiang, Y Jin, S Wang, H Li, ... ACS Applied Materials & Interfaces, 2020 | 63 | 2020 |
High-Temperature Corrosion Behavior of SiBCN Fibers for Aerospace Applications X Ji, S Wang, C Shao, H Wang ACS Appl. Mater. Interfaces 10 (23), 19712–19720, 2018 | 62 | 2018 |