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Keh-Chiang Ku
Keh-Chiang Ku
Foundry Management, Maxim Integrated
Verified email at maximintegrated.com
Title
Cited by
Cited by
Year
Effects of annealing time on defect-controlled ferromagnetism in
SJ Potashnik, KC Ku, SH Chun, JJ Berry, N Samarth, P Schiffer
Applied Physics Letters 79 (10), 1495-1497, 2001
4802001
Highly enhanced Curie temperature in low-temperature annealed [Ga, Mn] As epilayers
KC Ku, SJ Potashnik, RF Wang, SH Chun, P Schiffer, N Samarth, ...
Applied Physics Letters 82 (14), 2302-2304, 2003
4592003
Junction leakage reduction in SiGe process by implantation
CF Nieh, CH Chen, KC Ku, TL Lee, SC Chen
US Patent 7,482,211, 2009
2762009
Saturated ferromagnetism and magnetization deficit in optimally annealed epilayers
SJ Potashnik, KC Ku, R Mahendiran, SH Chun, RF Wang, N Samarth, ...
Physical Review B 66 (1), 012408, 2002
2092002
Spin-polarized tunneling in hybrid metal-semiconductor magnetic tunnel junctions
SH Chun, SJ Potashnik, KC Ku, P Schiffer, N Samarth
Physical Review B 66 (10), 100408, 2002
1102002
Capping-induced suppression of annealing effects on epilayers
MB Stone, KC Ku, SJ Potashnik, BL Sheu, N Samarth, P Schiffer
Applied physics letters 83 (22), 4568-4570, 2003
832003
Andreev reflection and pair-breaking effects at the superconductor/magnetic semiconductor interface
RP Panguluri, KC Ku, T Wojtowicz, X Liu, JK Furdyna, YB Lyanda-Geller, ...
Physical Review B 72 (5), 054510, 2005
712005
Exchange biasing of the ferromagnetic semiconductor Ga1− xMnxAs
KF Eid, MB Stone, KC Ku, O Maksimov, P Schiffer, N Samarth, TC Shih, ...
Applied physics letters 85 (9), 1556-1558, 2004
692004
Coercive field and magnetization deficit in epilayers
SJ Potashnik, KC Ku, RF Wang, MB Stone, N Samarth, P Schiffer, ...
Journal of applied physics 93 (10), 6784-6786, 2003
512003
The Mass Production of BSI CMOS Image Sensors
H Rhodes, D Tai, Y Qian, D Mao, V Venezia, W Zheng, Z Xiong, CY Liu, ...
International Image Sensor Workshop, 27-32, 2009
492009
Two-carrier transport in epitaxially grown MnAs
JJ Berry, SJ Potashnik, SH Chun, KC Ku, P Schiffer, N Samarth
Physical Review B 64 (5), 052408, 2001
442001
Advanced gate stacks with fully silicided (FUSI) gates and high-/spl kappa/dielectrics: Enhanced performance at reduced gate leakage
EP Gusev, C Cabral, BP Under, YH Kim, K Maitra, E Carrier, H Nayfeh, ...
IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004., 79-82, 2004
432004
Hybrid ferromagnetic/semiconductor heterostructures for spintronics
N Samarth, SH Chun, KC Ku, SJ Potashnik, P Schiffer
Solid State Communications 127 (2), 173-179, 2003
432003
Method, apparatus and system for providing improved full well capacity in an image sensor pixel
S Manabe, KC Ku, V Venezia, HC Tai, D Mao, HE Rhodes
US Patent 8,804,021, 2014
412014
Tunable anomalous Hall effect in a nonferromagnetic system
J Cumings, LS Moore, HT Chou, KC Ku, G Xiang, SA Crooker, N Samarth, ...
Physical review letters 96 (19), 196404, 2006
412006
Effects of germanium and carbon coimplants on phosphorus diffusion in silicon
KC Ku, CF Nieh, J Gong, LP Huang, YM Sheu, CC Wang, CH Chen, ...
Applied physics letters 89 (11), 2006
402006
Intrinsic exchange biasing in MnAs epilayers grown on (001) GaAs
SH Chun, SJ Potashnik, KC Ku, JJ Berry, P Schiffer, N Samarth
Applied Physics Letters 78 (17), 2530-2532, 2001
382001
Junction leakage reduction in SiGe process by tilt implantation
CF Nieh, KC Ku, CH Chen, H Chang, LT Wang, TL Lee
US Patent App. 11/607,326, 2007
302007
Partial buried channel transfer device for image sensors
G Chen, SC Hu, HC Tai, D Mao, M Bikumandla, W Zheng, Y Qian, Z Xiong, ...
US Patent 9,698,185, 2017
272017
Pad design for circuit under pad in semiconductor devices
Y Qian, HC Tai, KC Ku, V Venezia, D Mao, W Zheng, HE Rhodes
US Patent 8,569,856, 2013
262013
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