| Unsupervised learning in probabilistic neural networks with multi-state metal-oxide memristive synapses A Serb, J Bill, A Khiat, R Berdan, R Legenstein, T Prodromakis Nature communications 7 (1), 12611, 2016 | 378 | 2016 |
| Low-power linear computation using nonlinear ferroelectric tunnel junction memristors R Berdan, T Marukame, K Ota, M Yamaguchi, M Saitoh, S Fujii, J Deguchi, ... Nature Electronics 3 (5), 259-266, 2020 | 182 | 2020 |
| Emulating short-term synaptic dynamics with memristive devices R Berdan, E Vasilaki, A Khiat, G Indiveri, A Serb, T Prodromakis Scientific reports 6 (1), 18639, 2016 | 160 | 2016 |
| A -Controller-Based System for Interfacing Selectorless RRAM Crossbar Arrays R Berdan, A Serb, A Khiat, A Regoutz, C Papavassiliou, T Prodromakis IEEE Transactions on Electron Devices 62 (7), 2190-2196, 2015 | 97 | 2015 |
| A memristor SPICE model accounting for volatile characteristics of practical ReRAM R Berdan, C Lim, A Khiat, C Papavassiliou, T Prodromakis IEEE Electron Device Letters 35 (1), 135-137, 2013 | 75 | 2013 |
| High precision analogue memristor state tuning R Berdan, T Prodromakis, C Toumazou Electronics letters 48 (18), 1105-1107, 2012 | 71 | 2012 |
| Pulse-induced resistive and capacitive switching in TiO2 thin film devices I Salaoru, A Khiat, Q Li, R Berdan, T Prodromakis Applied Physics Letters 103 (23), 2013 | 51 | 2013 |
| Memristive devices as parameter setting elements in programmable gain amplifiers R Berdan, T Prodromakis, I Salaoru, A Khiat, C Toumazou Applied Physics Letters 101 (24), 2012 | 41 | 2012 |
| Origin of the OFF state variability in ReRAM cells I Salaoru, A Khiat, Q Li, R Berdan, C Papavassiliou, T Prodromakis Journal of Physics D: Applied Physics 47 (14), 145102, 2014 | 34 | 2014 |
| In-memory reinforcement learning with moderately-stochastic conductance switching of ferroelectric tunnel junctions R Berdan, T Marukame, S Kabuyanagi, K Ota, M Saitoh, S Fujii, J Deguchi, ... 2019 Symposium on VLSI Technology, T22-T23, 2019 | 30 | 2019 |
| A cell classifier for RRAM process development I Gupta, A Serb, R Berdan, A Khiat, A Regoutz, T Prodromakis IEEE Transactions on Circuits and Systems II: Express Briefs 62 (7), 676-680, 2015 | 28 | 2015 |
| Live demonstration: A versatile, low-cost platform for testing large ReRAM cross-bar arrays A Serb, R Berdan, A Khiat, C Papavassiliou, T Prodromakis 2014 IEEE International Symposium on Circuits and Systems (ISCAS), 441-441, 2014 | 24 | 2014 |
| Performance Maximization of In-Memory Reinforcement Learning with Variability-Controlled Hf1-xZrxO2 Ferroelectric Tunnel Junctions K Ota, M Yamaguchi, R Berdan, T Marukame, Y Nishi, K Matsuo, ... 2019 IEEE International Electron Devices Meeting (IEDM), 6.2. 1-6.2. 4, 2019 | 22 | 2019 |
| An FPGA-based instrument for en-masse RRAM characterization with ns pulsing resolution J Xing, A Serb, A Khiat, R Berdan, H Xu, T Prodromakis IEEE Transactions on Circuits and Systems I: Regular Papers 63 (6), 818-826, 2016 | 18 | 2016 |
| Applications of solid-state memristors in tunable filters R Wizenberg, A Khiat, R Berdan, C Papavassiliou, T Prodromakis 2014 IEEE International Symposium on Circuits and Systems (ISCAS), 2269-2272, 2014 | 14 | 2014 |
| Volatility characterization for RRAM devices I Gupta, A Serb, R Berdan, A Khiat, T Prodromakis IEEE Electron Device Letters 38 (1), 28-31, 2016 | 12 | 2016 |
| Temporal processing with volatile memristors R Berdan, T Prodromakis, A Khiat, I Salaoru, C Toumazou, F Perez-Diaz, ... 2013 IEEE International Symposium on Circuits and Systems (ISCAS), 425-428, 2013 | 9 | 2013 |
| Limitations and precision requirements for read-out of passive, linear, selectorless rram arrays A Serb, W Redman-White, C Papavassiliou, R Berdan, T Prodromakis 2015 IEEE International Symposium on Circuits and Systems (ISCAS), 189-192, 2015 | 8 | 2015 |
| Arithmetic apparatus R Berdan, Y Nishi, T Marukame US Patent 11,150,873, 2021 | 5 | 2021 |
| Spiking neural net work device and learning method of spiking neural network device Y Nishi, K Nomura, R Berdan, T Marukame US Patent 11,625,579, 2023 | 4 | 2023 |
