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Min Gyu Sung
Min Gyu Sung
Verified email at ibm.com
Title
Cited by
Cited by
Year
Replacement metal gate and fabrication process with reduced lithography steps
MG Sung, C Park, H Kim
US Patent 10,176,996, 2019
2862019
A 7nm FinFET technology featuring EUV patterning and dual strained high mobility channels
R Xie, P Montanini, K Akarvardar, N Tripathi, B Haran, S Johnson, T Hook, ...
2016 IEEE international electron devices meeting (IEDM), 2.7. 1-2.7. 4, 2016
1632016
Scaling Challenges for Advanced CMOS Devices
AP Jacob, R Xie, MG Sung, L Liebmann, RTP Lee, B Taylor
Scaling And Integration Of High-speed Electronics And Optomechanical Systems…, 2017
1052017
A 10nm platform technology for low power and high performance application featuring FINFET devices with multi workfunction gate stack on bulk and SOI
KI Seo, B Haran, D Gupta, D Guo, T Standaert, R Xie, H Shang, E Alptekin, ...
2014 Symposium on VLSI Technology (VLSI-Technology): Digest of Technical…, 2014
1042014
Methods of forming single and double diffusion breaks on integrated circuit products comprised of FinFET devices and the resulting products
R Xie, KY Lim, MG Sung, RRH Kim
US Patent 9,412,616, 2016
1002016
GaAs-based near-infrared omnidirectional reflector
Y Park, YG Roh, CO Cho, H Jeon, MG Sung, JC Woo
Applied physics letters 82 (17), 2770-2772, 2003
892003
Methods of forming diffusion breaks on integrated circuit products comprised of FinFET devices and the resulting products
R Xie, MG Sung, RRH Kim, KY Lim, C Park
US Patent 9,362,181, 2016
732016
Roles of interfacial TiOxN1− x layer and TiN electrode on bipolar resistive switching in TiN/TiO2/TiN frameworks
JS Kwak, YH Do, YC Bae, HS Im, JH Yoo, MG Sung, YT Hwang, JP Hong
Applied Physics Letters 96 (22), 2010
642010
Methods of forming nanosheet transistor with dielectric isolation of source-drain regions and related structure
J Frougier, MG Sung, R Xie, C Park, S Bentley
US Patent 9,947,804, 2018
632018
Single and double diffusion breaks on integrated circuit products comprised of FinFET devices
R Xie, KY Lim, MG Sung, RRH Kim
US Patent 9,865,704, 2018
622018
Real-time study of switching kinetics in integrated 1T/ HfOx1R RRAM: Intrinsic tunability of set/reset voltage and trade-off with switching time
S Koveshnikov, K Matthews, K Min, DC Gilmer, MG Sung, S Deora, HF Li, ...
2012 International Electron Devices Meeting, 20.4. 1-20.4. 3, 2012
502012
Effect of oxygen migration and interface engineering on resistance switching behavior of reactive metal/polycrystalline Pr0.7Ca0.3MnO3 device for nonvolatile…
D Seong, J Park, N Lee, M Hasan, S Jung, H Choi, J Lee, M Jo, W Lee, ...
2009 IEEE International Electron Devices Meeting (IEDM), 1-4, 2009
482009
Method and structure of forming self-aligned RMG gate for VFET
R Xie, C Park, MG Sung, H Kim
US Patent 9,780,208, 2017
452017
High endurance performance of 1T1R HfOxbased RRAM at low (<20μA) operative current and elevated (150C) temperature
B Butcher, S Koveshnikov, DC Gilmer, G Bersuker, MG Sung, ...
2011 IEEE International Integrated Reliability Workshop Final Report, 146-150, 2011
432011
Self-aligned wrap-around contacts for nanosheet devices
R Xie, C Park, MG Sung, H Kim
US Patent 9,847,390, 2017
422017
Semiconductor device with a gate contact positioned above the active region
R Xie, C Park, MG Sung, H Kim
US Patent 9,735,242, 2017
412017
Fin-type field effect transistors (FINFETS) with replacement metal gates and methods
R Xie, L Economikos, C Park, MG Sung
US Patent 10,177,041, 2019
402019
Semiconductor device with vertical channel transistor and method for fabricating the same
MG Sung, HJ Cho, YS Kim, KY Lim, SA Jang
US Patent 7,713,823, 2010
372010
Forming gate and source/drain contact openings by performing a common etch patterning process
R Xie, WJ Taylor Jr, MG Sung
US Patent 9,312,182, 2016
362016
Methods of performing concurrent fin and gate cut etch processes for FinFET semiconductor devices and the resulting devices
R Xie, MG Sung, CB Labelle, C Park, H Kim
US Patent 9,761,495, 2017
332017
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