| Indium nitride (InN): A review on growth, characterization, and properties AG Bhuiyan, A Hashimoto, A Yamamoto Journal of applied physics 94 (5), 2779-2808, 2003 | 1084 | 2003 |
| Band gap of hexagonal InN and InGaN alloys VY Davydov, AA Klochikhin, VV Emtsev, DA Kurdyukov, SV Ivanov, ... physica status solidi (b) 234 (3), 787-795, 2002 | 448 | 2002 |
| Band Gap of InN and In‐Rich InxGa1—xN alloys (0.36 < x < 1) VY Davydov, AA Klochikhin, VV Emtsev, SV Ivanov, VV Vekshin, ... physica status solidi (b) 230 (2), R4-R6, 2002 | 435 | 2002 |
| Defect reduction effects in GaAs on Si substrates by thermal annealing M Yamaguchi, A Yamamoto, M Tachikawa, Y Itoh, M Sugo Applied physics letters 53 (23), 2293-2295, 1988 | 245 | 1988 |
| InGaN solar cells: present state of the art and important challenges AG Bhuiyan, K Sugita, A Hashimoto, A Yamamoto IEEE Journal of photovoltaics 2 (3), 276-293, 2012 | 236 | 2012 |
| Electrodeposition of pyrite (FeS2) thin films for photovoltaic cells S Nakamura, A Yamamoto Solar Energy Materials and Solar Cells 65 (1-4), 79-85, 2001 | 198 | 2001 |
| Effect of dislocations on the efficiency of thin‐film GaAs solar cells on Si substrates M Yamaguchi, A Yamamoto, Y Itoh Journal of applied physics 59 (5), 1751-1753, 1986 | 156 | 1986 |
| Nitridation effects of substrate surface on the metalorganic chemical vapor deposition growth of InN on Si and α-Al2O3 substrates A Yamamoto, M Tsujino, M Ohkubo, A Hashimoto Journal of crystal growth 137 (3-4), 415-420, 1994 | 151 | 1994 |
| Recent advances in InN‐based solar cells: status and challenges in InGaN and InAlN solar cells A Yamamoto, MR Islam, TT Kang, A Hashimoto physica status solidi C 7 (5), 1309-1316, 2010 | 149 | 2010 |
| Radiation damage in InP single crystals and solar cells M Yamaguchi, C Uemura, A Yamamoto Journal of applied physics 55 (6), 1429-1436, 1984 | 149 | 1984 |
| Single-crystalline InN films with an absorption edge between 0.7 and 2 eV grown using different techniques and evidence of the actual band gap energy AG Bhuiyan, K Sugita, K Kasashima, A Hashimoto, A Yamamoto, ... Applied physics letters 83 (23), 4788-4790, 2003 | 125 | 2003 |
| Metalorganic chemical vapor deposition growth of InN for InN/Si tandem solar cell A Yamamoto, M Tsujino, M Ohkubo, A Hashimoto Solar Energy Materials and Solar Cells 35, 53-60, 1994 | 119 | 1994 |
| High conversion efficiency and high radiation resistance InP homojunction solar cells A Yamamoto, M Yamaguchi, C Uemura Applied physics letters 44 (6), 611-613, 1984 | 116 | 1984 |
| Double heterostructure GaAs tunnel junction for a AlGaAs/GaAs tandem solar cell H Sugiura, C Amano, A Yamamoto, M Yamaguchi Japanese journal of applied physics 27 (2R), 269, 1988 | 111 | 1988 |
| Pyrite (FeS2) thin films prepared by spray method using FeSO4 and (NH4) 2Sx A Yamamoto, M Nakamura, A Seki, EL Li, A Hashimoto, S Nakamura Solar energy materials and solar cells 75 (3-4), 451-456, 2003 | 107 | 2003 |
| Electron irradiation damage in radiation-resistant InP solar cells M Yamaguchi, C Uemura, A Yamamoto, A Shibukawa Japanese journal of applied physics 23 (3R), 302, 1984 | 94 | 1984 |
| Blue electroluminescence from ZnSe diodes M Yamaguchi, A Yamamoto, M Kondo Journal of Applied Physics 48 (1), 196-202, 1977 | 93 | 1977 |
| Minority‐carrier injection annealing of electron irradiation‐induced defects in InP solar cells M Yamaguchi, K Ando, A Yamamoto, C Uemura Applied physics letters 44 (4), 432-434, 1984 | 88 | 1984 |
| Improved electrical properties for metalorganic vapour phase epitaxial InN films A Yamamoto, T Tanaka, K Koide, A Hashimoto physica status solidi (a) 194 (2), 510-514, 2002 | 82 | 2002 |
| Residual strains in heteroepitaxial III‐V semiconductor films on Si (100) substrates M Sugo, N Uchida, A Yamamoto, T Nishioka, M Yamaguchi Journal of applied physics 65 (2), 591-595, 1989 | 82 | 1989 |
