| Theory of the peroxy-radical defect in a-Si O 2 AH Edwards, WB Fowler Physical Review B 26 (12), 6649, 1982 | 281 | 1982 |
| Electronic structure of intrinsic defects in crystalline germanium telluride AH Edwards, AC Pineda, PA Schultz, MG Martin, AP Thompson, ... Physical Review B—Condensed Matter and Materials Physics 73 (4), 045210, 2006 | 269 | 2006 |
| Post‐irradiation cracking of H2 and formation of interface states in irradiated metal‐oxide‐semiconductor field‐effect transistors RE Stahlbush, AH Edwards, DL Griscom, BJ Mrstik Journal of applied physics 73 (2), 658-667, 1993 | 212 | 1993 |
| Asymmetry and long-range character of lattice deformation by neutral oxygen vacancy in α-quartz VB Sulimov, PV Sushko, AH Edwards, AL Shluger, AM Stoneham Physical Review B 66 (2), 024108, 2002 | 179 | 2002 |
| Mechanisms for radiation dose-rate sensitivity of bipolar transistors HP Hjalmarson, RL Pease, SC Witczak, MR Shaneyfelt, JR Schwank, ... IEEE Transactions on Nuclear Science 50 (6), 1901-1909, 2003 | 170 | 2003 |
| Theory of the P b center at the< 111> Si/SiO 2 interface AH Edwards Physical Review B 36 (18), 9638, 1987 | 147 | 1987 |
| Interaction of H and H 2 with the silicon dangling orbital at the< 111> Si/SiO 2 interface AH Edwards Physical Review B 44 (4), 1832, 1991 | 129 | 1991 |
| Reconfigurable memristive device technologies AH Edwards, HJ Barnaby, KA Campbell, MN Kozicki, W Liu, MJ Marinella Proceedings of the IEEE 103 (7), 1004-1033, 2015 | 114 | 2015 |
| An introduction to reconfigurable systems JC Lyke, CG Christodoulou, GA Vera, AH Edwards Proceedings of the IEEE 103 (3), 291-317, 2015 | 78 | 2015 |
| Theory of persistent, p-type, metallic conduction in c-GeTe AH Edwards, AC Pineda, PA Schultz, MG Martin, AP Thompson, ... Journal of Physics: Condensed Matter 17 (32), L329, 2005 | 78 | 2005 |
| Semiempirical molecular orbital techniques applied to silicon dioxide: MINDO/3 AH Edwards, WB Fowler Journal of Physics and Chemistry of Solids 46 (7), 841-857, 1985 | 75 | 1985 |
| Layer intermixing during metal/metal oxide adsorption: Ti/sapphire (0001) C Verdozzi, PA Schultz, R Wu, AH Edwards, N Kioussis Physical Review B 66 (12), 125408, 2002 | 71 | 2002 |
| Calibration of embedded-cluster method for defect studies in amorphous silica AS Mysovsky, PV Sushko, S Mukhopadhyay, AH Edwards, AL Shluger Physical Review B 69 (8), 085202, 2004 | 66 | 2004 |
| Interaction of hydrogen with defects in a-SiO2 AH Edwards, JA Pickard, RE Stahlbush Journal of non-crystalline solids 179, 148-161, 1994 | 54 | 1994 |
| Dissociation of H2 at silicon dangling orbitals in a-SiO2: a quantum mechanical treatment of nuclear motion AH Edwards Journal of non-crystalline solids 187, 232-243, 1995 | 50 | 1995 |
| Interaction of hydrogenated molecules with intrinsic defects in a-SiO2 AH Edwards, G Germann Nuclear Instruments and Methods in Physics Research Section B: Beam …, 1988 | 49 | 1988 |
| Theory of the self-trapped hole in a-SiO 2 AH Edwards Physical review letters 71 (19), 3190, 1993 | 48 | 1993 |
| Thermally activated electron capture by mobile protons in SiO2 thin films K Vanheusden, SP Karna, RD Pugh, WL Warren, DM Fleetwood, ... Applied Physics Letters 72 ((1)), 28--30, 1998 | 47 | 1998 |
| Transient thermal gradients in barium titanate positive temperature coefficient (PTC) thermistors DS Smith, N Ghayoub, I Charissou, O Bellon, P Abélard, AH Edwards Journal of the American ceramic Society 81 (7), 1789-1796, 1998 | 39 | 1998 |
| Asymmetrical relaxation of simple E’centers in silicon dioxide isomorphs AH Edwards, WB Fowler, FJ Feigl Physical Review B 37 (15), 9000, 1988 | 36 | 1988 |
