| Langmuir− Blodgett film deposition of metallic nanoparticles and their application to electronic memory structures S Paul, C Pearson, A Molloy, MA Cousins, M Green, S Kolliopoulou, ... Nano Letters 3 (4), 533-536, 2003 | 350 | 2003 |
| Charge storage and interface states effects in Si-nanocrystal memory obtained using low-energy implantation and annealing E Kapetanakis, P Normand, D Tsoukalas, K Beltsios, J Stoemenos, ... Applied Physics Letters 77 (21), 3450-3452, 2000 | 192 | 2000 |
| Structural and electrical properties of silicon dioxide layers with embedded germanium nanocrystals grown by molecular beam epitaxy A Kanjilal, JL Hansen, P Gaiduk, AN Larsen, N Cherkashin, A Claverie, ... Applied Physics Letters 82 (8), 1212-1214, 2003 | 160 | 2003 |
| Graphene‐Modified Interface Controls Transition from VCM to ECM Switching Modes in Ta/TaOx Based Memristive Devices M Lübben, P Karakolis, V Ioannou‐Sougleridis, P Normand, P Dimitrakis, ... Advanced materials 27 (40), 6202-6207, 2015 | 148 | 2015 |
| Manipulation of two-dimensional arrays of Si nanocrystals embedded in thin layers by low energy ion implantation C Bonafos, M Carrada, N Cherkashin, H Coffin, D Chassaing, ... Journal of applied physics 95 (10), 5696-5702, 2004 | 147 | 2004 |
| Effect of annealing environment on the memory properties of thin oxides with embedded Si nanocrystals obtained by low-energy ion-beam synthesis P Normand, E Kapetanakis, P Dimitrakis, D Tsoukalas, K Beltsios, ... Applied Physics Letters 83 (1), 168-170, 2003 | 142 | 2003 |
| Hybrid silicon–organic nanoparticle memory device S Kolliopoulou, P Dimitrakis, P Normand, HL Zhang, N Cant, SD Evans, ... Journal of Applied Physics 94 (8), 5234-5239, 2003 | 136 | 2003 |
| Diffusivity measurements of silicon in silicon dioxide layers using isotopically pure material D Tsoukalas, C Tsamis, P Normand Journal of Applied Physics 89 (12), 7809-7813, 2001 | 102 | 2001 |
| Silicon nanocrystal memory devices obtained by ultra-low-energy ion-beam synthesis P Dimitrakis, E Kapetanakis, D Tsoukalas, D Skarlatos, C Bonafos, ... Solid-State Electronics 48 (9), 1511-1517, 2004 | 100 | 2004 |
| Room-temperature single-electron charging phenomena in large-area nanocrystal memory obtained by low-energy ion beam synthesis E Kapetanakis, P Normand, D Tsoukalas, K Beltsios Applied physics letters 80 (15), 2794-2796, 2002 | 95 | 2002 |
| Recent advances in nanoparticle memories D Tsoukalas, P Dimitrakis, S Kolliopoulou, P Normand Materials Science and Engineering: B 124, 93-101, 2005 | 84 | 2005 |
| Fabrication of single crystal Si cantilevers using a dry release process and application in a capacitive-type humidity sensor S Chatzandroulis, A Tserepi, D Goustouridis, P Normand, D Tsoukalas Microelectronic Engineering 61, 955-961, 2002 | 71 | 2002 |
| Nanocrystals manufacturing by ultra-low-energy ion-beam-synthesis for non-volatile memory applications P Normand, E Kapetanakis, P Dimitrakis, D Skarlatos, K Beltsios, ... Nuclear Instruments and Methods in Physics Research Section B: Beam …, 2004 | 69 | 2004 |
| Transmission electron microscopy measurements of the injection distances in nanocrystal-based memories GB Assayag, C Bonafos, M Carrada, A Claverie, P Normand, D Tsoukalas Applied physics letters 82 (2), 200-202, 2003 | 64 | 2003 |
| Vertical devices of self-assembled hybrid organic/inorganic monolayers based on tungsten polyoxometalates E Makarona, E Kapetanakis, DM Velessiotis, A Douvas, P Argitis, ... Microelectronic Engineering 85 (5-6), 1399-1402, 2008 | 62 | 2008 |
| Oxidation of Si nanocrystals fabricated by ultralow-energy ion implantation in thin layers H Coffin, C Bonafos, S Schamm, N Cherkashin, GB Assayag, A Claverie, ... Journal of applied physics 99 (4), 044302, 2006 | 62 | 2006 |
| Silicon self-diffusivity measurement in thermal by isotopic exchange D Mathiot, JP Schunck, M Perego, M Fanciulli, P Normand, C Tsamis, ... Journal of applied physics 94 (3), 2136-2138, 2003 | 57 | 2003 |
| Formation of 2‐D Arrays of Silicon Nanocrystals in Thin SiO2 Films by Very‐Low Energy Si+ Ion Implantation P Normand, D Tsoukalas, E Kapetanakis, JA Van Den Berg, DG Armour, ... Electrochemical and solid-state letters 1 (2), 88, 1998 | 57 | 1998 |
| Si and Ge nanocrystals for future memory devices C Bonafos, M Carrada, G Benassayag, S Schamm-Chardon, J Groenen, ... Materials Science in Semiconductor Processing 15 (6), 615-626, 2012 | 48 | 2012 |
| MOS memory structures by very-low-energy-implanted Si in thin SiO2 P Dimitrakis, E Kapetanakis, P Normand, D Skarlatos, D Tsoukalas, ... Materials Science and Engineering: B 101 (1-3), 14-18, 2003 | 47 | 2003 |
Dimitris TsoukalasProfessor at National Technical University of AthensVerified email at central.ntua.gr
