Interfacial characteristics of H Li, S Dimitrijev, HB Harrison, D Sweatman
Applied physics letters 70 (15), 2028-2030, 1997
377 1997 Effects of nitridation in gate oxides grown on 4H-SiC P Jamet, S Dimitrijev, P Tanner
Journal of Applied Physics 90 (10), 5058-5063, 2001
340 2001 Principles of semiconductor devices S Dimitrijev
(No Title), 2012
314 2012 Mechanisms responsible for improvement of VV Afanas’ ev, A Stesmans, F Ciobanu, G Pensl, KY Cheong, S Dimitrijev
Applied Physics Letters 82 (4), 568-570, 2003
248 2003 The piezoresistive effect of SiC for MEMS sensors at high temperatures: A review HP Phan, DV Dao, K Nakamura, S Dimitrijev, NT Nguyen
Journal of Microelectromechanical systems 24 (6), 1663-1677, 2015
236 2015 Understanding semiconductor devices S Dimitrijev
(No Title), 2000
203 2000 Physical properties of P Jamet, S Dimitrijev
Applied Physics Letters 79 (3), 323-325, 2001
199 2001 Band alignment and defect states at SiC/oxide interfaces VV Afanas’Ev, F Ciobanu, S Dimitrijev, G Pensl, A Stesmans
Journal of Physics: Condensed Matter 16 (17), S1839, 2004
182 2004 Advances in SiC power MOSFET technology S Dimitrijev, P Jamet
Microelectronics reliability 43 (2), 225-233, 2003
139 2003 Investigation of nitric oxide and Ar annealed H Li, S Dimitrijev, D Sweatman, HB Harrison, P Tanner, B Feil
Journal of applied Physics 86 (8), 4316-4321, 1999
128 1999 Mechanism of Threshold Voltage Shift in X Tang, B Li, HA Moghadam, P Tanner, J Han, S Dimitrijev
IEEE Electron Device Letters 39 (8), 1145-1148, 2018
116 2018 High quality ultrathin dielectric films grown on silicon in a nitric oxide ambient ZQ Yao, HB Harrison, S Dimitrijev, D Sweatman, YT Yeow
Applied physics letters 64 (26), 3584-3586, 1994
110 1994 Nitridation of silicon-dioxide films grown on 6H silicon carbide S Dimitrijev, H Li, HB Harrison, D Sweatman
IEEE Electron Device Letters 18 (5), 175-177, 1997
107 1997 Growth of 3C–SiC on 150-mm Si (100) substrates by alternating supply epitaxy at 1000 C L Wang, S Dimitrijev, J Han, A Iacopi, L Hold, P Tanner, HB Harrison
Thin solid films 519 (19), 6443-6446, 2011
106 2011 Power-switching applications beyond silicon: Status and future prospects of SiC and GaN devices S Dimitrijev, J Han, HA Moghadam, A Aminbeidokhti
Mrs Bulletin 40 (5), 399-405, 2015
105 2015 Electrical and physical characterization of gate oxides on KY Cheong, S Dimitrijev, J Han, HB Harrison
Journal of applied physics 93 (9), 5682-5686, 2003
102 2003 Analysis of CMOS transistor instabilities S Dimitrijev, N Stojadinović
Solid-state electronics 30 (10), 991-1003, 1987
96 1987 Analysis of subthreshold carrier transport for ultimate DGMOSFET HK Jung, S Dimitrijev
IEEE transactions on electron devices 53 (4), 685-691, 2006
84 2006 Enhanced channel mobility of 4H–SiC metal–oxide–semiconductor transistors fabricated with standard polycrystalline silicon technology and gate-oxide nitridation R Schörner, P Friedrichs, D Peters, D Stephani, S Dimitrijev, P Jamet
Applied physics letters 80 (22), 4253-4255, 2002
84 2002 Demonstration of p-type 3C–SiC grown on 150 mm Si (1 0 0) substrates by atomic-layer epitaxy at 1000 C L Wang, S Dimitrijev, J Han, P Tanner, A Iacopi, L Hold
Journal of Crystal Growth 329 (1), 67-70, 2011
80 2011 