Sima Dimitrijev
Sima Dimitrijev
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Interfacial characteristics of and NO nitrided grown on SiC by rapid thermal processing
H Li, S Dimitrijev, HB Harrison, D Sweatman
Applied physics letters 70 (15), 2028-2030, 1997
Effects of nitridation in gate oxides grown on 4H-SiC
P Jamet, S Dimitrijev, P Tanner
Journal of Applied Physics 90 (10), 5058-5063, 2001
Principles of semiconductor devices
S Dimitrijev
(No Title), 2012
Appl. Phys. Lett.
T Yao, HB Harrison, S Dimitrijev, D Sweatman, YT Yeow
Appl. Phys. Lett 64, 3548, 1994
Mechanisms responsible for improvement of interface properties by nitridation
VV Afanas’ ev, A Stesmans, F Ciobanu, G Pensl, KY Cheong, S Dimitrijev
Applied Physics Letters 82 (4), 568-570, 2003
The piezoresistive effect of SiC for MEMS sensors at high temperatures: a review
HP Phan, DV Dao, K Nakamura, S Dimitrijev, NT Nguyen
Journal of Microelectromechanical systems 24 (6), 1663-1677, 2015
Understanding semiconductor devices
S Dimitrijev
(No Title), 2000
Physical properties of and NO-nitrided gate oxides grown on 4H SiC
P Jamet, S Dimitrijev
Applied Physics Letters 79 (3), 323-325, 2001
Band alignment and defect states at SiC/oxide interfaces
VV Afanas’Ev, F Ciobanu, S Dimitrijev, G Pensl, A Stesmans
Journal of Physics: Condensed Matter 16 (17), S1839, 2004
Advances in SiC power MOSFET technology
S Dimitrijev, P Jamet
Microelectronics reliability 43 (2), 225-233, 2003
Investigation of nitric oxide and Ar annealed interfaces by x-ray photoelectron spectroscopy
H Li, S Dimitrijev, D Sweatman, HB Harrison, P Tanner, B Feil
Journal of applied Physics 86 (8), 4316-4321, 1999
Mechanism of Threshold Voltage Shift in-GaN Gate AlGaN/GaN Transistors
X Tang, B Li, HA Moghadam, P Tanner, J Han, S Dimitrijev
IEEE Electron Device Letters 39 (8), 1145-1148, 2018
Nitridation of silicon-dioxide films grown on 6H silicon carbide
S Dimitrijev, H Li, HB Harrison, D Sweatman
IEEE Electron Device Letters 18 (5), 175-177, 1997
Electrical and physical characterization of gate oxides on grown in diluted
KY Cheong, S Dimitrijev, J Han, HB Harrison
Journal of applied physics 93 (9), 5682-5686, 2003
Growth of 3C–SiC on 150-mm Si (100) substrates by alternating supply epitaxy at 1000 C
L Wang, S Dimitrijev, J Han, A Iacopi, L Hold, P Tanner, HB Harrison
Thin solid films 519 (19), 6443-6446, 2011
Power-switching applications beyond silicon: Status and future prospects of SiC and GaN devices
S Dimitrijev, J Han, HA Moghadam, A Aminbeidokhti
Mrs Bulletin 40 (5), 399-405, 2015
Analysis of CMOS transistor instabilities
S Dimitrijev, N Stojadinović
Solid-state electronics 30 (10), 991-1003, 1987
Analysis of subthreshold carrier transport for ultimate DGMOSFET
HK Jung, S Dimitrijev
IEEE transactions on electron devices 53 (4), 685-691, 2006
Enhanced channel mobility of 4H–SiC metal–oxide–semiconductor transistors fabricated with standard polycrystalline silicon technology and gate-oxide nitridation
R Schörner, P Friedrichs, D Peters, D Stephani, S Dimitrijev, P Jamet
Applied physics letters 80 (22), 4253-4255, 2002
Surface-passivation effects on the performance of 4H-SiC BJTs
R Ghandi, B Buono, M Domeij, R Esteve, A Schöner, J Han, S Dimitrijev, ...
IEEE Transactions on Electron Devices 58 (1), 259-265, 2010
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