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Woongkyu Lee
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Evolution of phases and ferroelectric properties of thin Hf0.5Zr0.5O2 films according to the thickness and annealing temperature
M Hyuk Park, H Joon Kim, Y Jin Kim, W Lee, T Moon, C Seong Hwang
Applied Physics Letters 102 (24), 242905, 2013
7832013
Surface and grain boundary energy as the key enabler of ferroelectricity in nanoscale hafnia-zirconia: a comparison of model and experiment
MH Park, YH Lee, HJ Kim, T Schenk, W Lee, K Do Kim, FPG Fengler, ...
Nanoscale 9 (28), 9973-9986, 2017
3572017
Effect of forming gas annealing on the ferroelectric properties of Hf0.5Zr0.5O2 thin films with and without Pt electrodes
M Hyuk Park, H Joon Kim, Y Jin Kim, W Lee, H Kyeom Kim, ...
Applied Physics Letters 102 (11), 112914, 2013
2232013
Study on the degradation mechanism of the ferroelectric properties of thin Hf0.5Zr0.5O2 films on TiN and Ir electrodes
MH Park, HJ Kim, YJ Kim, W Lee, T Moon, KD Kim, CS Hwang
Applied Physics Letters 105 (7), 072902, 2014
1852014
Atomic Layer Deposition of SrTiO3 Thin Films with Highly Enhanced Growth Rate for Ultrahigh Density Capacitors
SW Lee, JH Han, S Han, W Lee, JH Jang, M Seo, SK Kim, C Dussarrat, ...
Chemistry of Materials 23 (8), 2227-2236, 2011
1582011
Atomic layer deposition of SrTiO3 films with cyclopentadienyl-based precursors for metal–insulator–metal capacitors
W Lee, JH Han, W Jeon, YW Yoo, SW Lee, SK Kim, CH Ko, ...
Chemistry of Materials 25 (6), 953-961, 2013
872013
Improvement in the leakage current characteristic of metal-insulator-metal capacitor by adopting RuO2 film as bottom electrode
JH Han, S Han, W Lee, SW Lee, SK Kim, J Gatineau, C Dussarrat, ...
Applied Physics Letters 99 (2), 022901, 2011
842011
Structure and electrical properties of Al-doped HfO2 and ZrO2 films grown via atomic layer deposition on Mo electrodes
YW Yoo, W Jeon, W Lee, CH An, SK Kim, CS Hwang
ACS applied materials & interfaces 6 (24), 22474-22482, 2014
792014
Conformal Formation of (GeTe2)(1–x)(Sb2Te3) x Layers by Atomic Layer Deposition for Nanoscale Phase Change Memories
T Eom, S Choi, BJ Choi, MH Lee, T Gwon, SH Rha, W Lee, MS Kim, ...
Chemistry of Materials 24 (11), 2099-2110, 2012
642012
Influences of metal, non-metal precursors, and substrates on atomic layer deposition processes for the growth of selected functional electronic materials
SW Lee, BJ Choi, T Eom, JH Han, SK Kim, SJ Song, W Lee, CS Hwang
Coordination Chemistry Reviews 257 (23-24), 3154-3176, 2013
622013
Improved Initial Growth Behavior of SrO and SrTiO3 Films Grown by Atomic Layer Deposition Using {Sr (demamp)(tmhd)} 2 as Sr-Precursor
W Lee, W Jeon, CH An, MJ Chung, HJ Kim, T Eom, SM George, BK Park, ...
Chemistry of Materials 27 (11), 3881-3891, 2015
452015
Cs2SnI6-Encapsulated Multidye-Sensitized All-Solid-State Solar Cells
B Lee, Y Ezhumalai, W Lee, MC Chen, CY Yeh, TJ Marks, RPH Chang
ACS applied materials & interfaces 11 (24), 21424-21434, 2019
442019
Electrical properties of TiO 2-based MIM capacitors deposited by TiCl 4 and TTIP based atomic layer deposition processes
B Hudec, K Hušeková, A Tarre, JH Han, S Han, A Rosová, W Lee, ...
Microelectronic Engineering 88 (7), 1514-1516, 2011
432011
High-Resolution Colloidal Quantum Dot Film Photolithography via Atomic Layer Deposition of ZnO
GH Kim, J Lee, JY Lee, J Han, Y Choi, CJ Kang, KB Kim, W Lee, J Lim, ...
ACS Applied Materials & Interfaces 13 (36), 43075-43084, 2021
422021
Growth of conductive SrRuO3 films by combining atomic layer deposited SrO and chemical vapor deposited RuO2 layers
JH Han, W Lee, W Jeon, SW Lee, CS Hwang, C Ko, J Gatineau
Chemistry of Materials 24 (24), 4686-4692, 2012
392012
The mechanism for the suppression of leakage current in high dielectric TiO2 thin films by adopting ultra-thin HfO2 films for memory application
M Seo, S Ho Rha, S Keun Kim, J Hwan Han, W Lee, S Han, ...
Journal of Applied Physics 110 (2), 024105, 2011
372011
Evaluating the Top Electrode Material for Achieving an Equivalent Oxide Thickness Smaller than 0.4 nm from an Al-doped TiO2 Film
W Jeon, S Yoo, HK Kim, W Lee, CH An, MJ Chung, CJ Cho, SK Kim, ...
ACS applied materials & interfaces 6 (23), 21632-21637, 2014
352014
Role of Interfacial Reaction in Atomic Layer Deposition of TiO2 Thin Films Using Ti (O-i Pr) 2 (tmhd) 2 on Ru or RuO2 Substrates
SW Lee, JH Han, SK Kim, S Han, W Lee, CS Hwang
Chemistry of Materials 23 (4), 976-983, 2011
352011
Controlling the Electrical Characteristics of ZrO2/Al2O3/ZrO2 Capacitors by Adopting a Ru Top Electrode Grown via Atomic Layer Deposition
CH An, W Lee, SH Kim, CJ Cho, DG Kim, DS Kwon, ST Cho, SH Cha, ...
physica status solidi (RRL)–Rapid Research Letters 13 (3), 1800454, 2019
332019
Controlling the Al-Doping Profile and Accompanying Electrical Properties of Rutile-Phased TiO2 Thin Films
W Jeon, SH Rha, W Lee, YW Yoo, CH An, KH Jung, SK Kim, CS Hwang
ACS applied materials & interfaces 6 (10), 7910-7917, 2014
322014
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