Gregor Pobegen
Gregor Pobegen
Senior staff engineer, KAI GmbH, Austria
Verified email at - Homepage
Cited by
Cited by
Threshold voltage peculiarities and bias temperature instabilities of SiC MOSFETs
T Aichinger, G Rescher, G Pobegen
Microelectronics Reliability 80, 68-78, 2018
Analytic modeling of the bias temperature instability using capture/emission time maps
T Grasser, PJ Wagner, H Reisinger, T Aichinger, G Pobegen, M Nelhiebel, ...
2011 International Electron Devices Meeting, 27.4. 1-27.4. 4, 2011
Towards understanding the origin of threshold voltage instability of AlGaN/GaN MIS-HEMTs
P Lagger, C Ostermaier, G Pobegen, D Pogany
2012 International Electron Devices Meeting, 13.1. 1-13.1. 4, 2012
The ‘permanent’component of NBTI: Composition and annealing
T Grasser, T Aichinger, G Pobegen, H Reisinger, PJ Wagner, J Franco, ...
2011 International Reliability Physics Symposium, 6A. 2.1-6A. 2.9, 2011
On the distribution of NBTI time constants on a long, temperature-accelerated time scale
G Pobegen, T Grasser
IEEE Transactions on Electron Devices 60 (7), 2148-2155, 2013
On the subthreshold drain current sweep hysteresis of 4H-SiC nMOSFETs
G Rescher, G Pobegen, T Aichinger, T Grasser
2016 IEEE International Electron Devices Meeting (IEDM), 10.8. 1-10.8. 4, 2016
Gate-sided hydrogen release as the origin of" permanent" NBTI degradation: From single defects to lifetimes
T Grasser, M Waltl, Y Wimmer, W Goes, R Kosik, G Rzepa, H Reisinger, ...
2015 IEEE International Electron Devices Meeting (IEDM), 20.1. 1-20.1. 4, 2015
Hydrogen-related volatile defects as the possible cause for the recoverable component of NBTI
T Grasser, K Rott, H Reisinger, M Waltl, P Wagner, F Schanovsky, W Goes, ...
2013 IEEE International Electron Devices Meeting, 15.5. 1-15.5. 4, 2013
Observation of normally distributed energies for interface trap recovery after hot-carrier degradation
G Pobegen, S Tyaginov, M Nelhiebel, T Grasser
IEEE electron device letters 34 (8), 939-941, 2013
Effect of carbon doping on charging/discharging dynamics and leakage behavior of carbon-doped GaN
C Koller, G Pobegen, C Ostermaier, D Pogany
IEEE Transactions on Electron Devices 65 (12), 5314-5321, 2018
Preconditioned BTI on 4H-SiC: Proposal for a nearly delay time-independent measurement technique
G Rescher, G Pobegen, T Aichinger, T Grasser
IEEE Transactions on Electron Devices 65 (4), 1419-1426, 2018
Very fast dynamics of threshold voltage drifts in GaN-based MIS-HEMTs
P Lagger, A Schiffmann, G Pobegen, D Pogany, C Ostermaier
IEEE Electron Device Letters 34 (9), 1112-1114, 2013
Understanding temperature acceleration for NBTI
G Pobegen, T Aichinger, M Nelhiebel, T Grasser
2011 International Electron Devices Meeting, 27.3. 1-27.3. 4, 2011
The interplay of blocking properties with charge and potential redistribution in thin carbon-doped GaN on n-doped GaN layers
C Koller, G Pobegen, C Ostermaier, M Huber, D Pogany
Applied Physics Letters 111 (3), 2017
Electrically detected magnetic resonance of carbon dangling bonds at the Si-face 4H-SiC/SiO2 interface
G Gruber, J Cottom, R Meszaros, M Koch, G Pobegen, T Aichinger, ...
Journal of Applied Physics 123 (16), 2018
An adapted method for analyzing 4H silicon carbide metal-oxide-semiconductor field-effect transistors
M Hauck, J Lehmeyer, G Pobegen, HB Weber, M Krieger
Communications Physics 2 (1), 5, 2019
Threshold voltage instabilities of present SiC-power MOSFETs under positive bias temperature stress
G Rescher, G Pobegen, T Grasser
Materials Science Forum 858, 481-484, 2016
Physical modeling of bias temperature instabilities in SiC MOSFETs
C Schleich, J Berens, G Rzepa, G Pobegen, G Rescher, S Tyaginov, ...
2019 IEEE International Electron Devices Meeting (IEDM), 20.5. 1-20.5. 4, 2019
Charge pumping measurements on differently passivated lateral 4H-SiC MOSFETs
A Salinaro, G Pobegen, T Aichinger, B Zippelius, D Peters, P Friedrichs, ...
IEEE Transactions on Electron Devices 62 (1), 155-163, 2014
Implications of gate-sided hydrogen release for post-stress degradation build-up after BTI stress
T Grasser, M Waltl, K Puschkarsky, B Stampfer, G Rzepa, G Pobegen, ...
2017 IEEE International Reliability Physics Symposium (IRPS), 6A-2.1-6A-2.6, 2017
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