| Dependence of the photoreduction and oxidation behavior of indium oxide films on substrate temperature and film thickness Bender | 162 | 2001 |
| Submicron gap capacitor for measurement of breakdown voltage in air E Hourdakis, BJ Simonds, NM Zimmerman Review of scientific instruments 77 (3), 2006 | 112 | 2006 |
| Ozone sensing properties of polycrystalline indium oxide films at room temperature Kiriakidis | 64 | 2001 |
| Why the long-term charge offset drift in Si single-electron tunneling transistors is much smaller (better) than in metal-based ones: Two-level fluctuator stability NM Zimmerman, WH Huber, B Simonds, E Hourdakis, A Fujiwara, Y Ono, ... Journal of Applied Physics 104 (3), 2008 | 59 | 2008 |
| Dielectric permittivity of porous Si for use as substrate material in Si-integrated RF devices P Sarafis, E Hourdakis, AG Nassiopoulou IEEE transactions on electron Devices 60 (4), 1436-1443, 2013 | 47 | 2013 |
| Electrical breakdown in the microscale: Testing the standard theory E Hourdakis, GW Bryant, NM Zimmerman Journal of Applied Physics 100 (12), 2006 | 47 | 2006 |
| Error mechanisms and rates in tunable-barrier single-electron turnstiles and charge-coupled devices NM Zimmerman, E Hourdakis, Y Ono, A Fujiwara, Y Takahashi Journal of applied physics 96 (9), 5254-5266, 2004 | 47 | 2004 |
| Error mechanisms and rates in tunable-barrier single-electron turnstiles and charge-coupled devices NM Zimmerman, E Hourdakis, Y Ono, A Fujiwara, Y Takahashi Journal of applied physics 96 (9), 5254-5266, 2004 | 47 | 2004 |
| Error mechanisms and rates in tunable-barrier single-electron turnstiles and charge-coupled devices NM Zimmerman, E Hourdakis, Y Ono, A Fujiwara, Y Takahashi Journal of applied physics 96 (9), 5254-5266, 2004 | 47 | 2004 |
| A thermoelectric generator using porous Si thermal isolation E Hourdakis, AG Nassiopoulou Sensors 13 (10), 13596-13608, 2013 | 45 | 2013 |
| High performance MIM capacitor using anodic alumina dielectric E Hourdakis, AG Nassiopoulou Microelectronic Engineering 90, 12-14, 2012 | 41 | 2012 |
| High-density MIM capacitors with porous anodic alumina dielectric E Hourdakis, AG Nassiopoulou IEEE transactions on electron devices 57 (10), 2679-2683, 2010 | 41 | 2010 |
| Advanced Si-based substrates for RF passive integration: Comparison between local porous Si layer technology and trap-rich high resistivity Si P Sarafis, E Hourdakis, AG Nassiopoulou, CR Neve, KB Ali, JP Raskin Solid-state electronics 87, 27-33, 2013 | 34 | 2013 |
| On-chip high-performance millimeter-wave transmission lines on locally grown porous silicon areas H Issa, P Ferrari, E Hourdakis, AG Nassiopoulou IEEE Transactions on Electron Devices 58 (11), 3720-3724, 2011 | 33 | 2011 |
| Direct resistance comparisons from the QHR to100 M/spl Omega/using a cryogenic current comparator RE Elmquist, E Hourdakis, DG Jarrett, NM Zimmerman IEEE transactions on instrumentation and measurement 54 (2), 525-528, 2005 | 31 | 2005 |
| High-performance MIM capacitors with nanomodulated electrode surface E Hourdakis, A Travlos, AG Nassiopoulou IEEE Transactions on Electron Devices 62 (5), 1568-1573, 2015 | 18 | 2015 |
| Single photoresist masking for local porous Si formation E Hourdakis, AG Nassiopoulou Journal of Micromechanics and Microengineering 24 (11), 117002, 2014 | 18 | 2014 |
| Lack of charge offset drift is a robust property of Si single electron transistors E Hourdakis, JA Wahl, NM Zimmerman Applied Physics Letters 92 (6), 2008 | 17 | 2008 |
| Effect of temperature on advanced Si-based substrates performance for RF passive integration CR Neve, KB Ali, P Sarafis, E Hourdakis, AG Nassiopoulou, JP Raskin Microelectronic Engineering 120, 205-209, 2014 | 15 | 2014 |
| Thermal energy harvesting M Mouis, E Chávez‐Ángel, C Sotomayor‐Torres, F Alzina, MV Costache, ... Beyond‐CMOS Nanodevices 1, 135-219, 2014 | 14 | 2014 |
Dr. Androula NassiopoulouDirector of Research, NCSR Demokritos, Institute of nanoscience &NanotechnologyVerified email at inn.demokritos.gr
