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Fabian Triendl
Fabian Triendl
Verified email at tuwien.ac.at
Title
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Cited by
Year
Theoretical and experimental investigations of barrier height inhomogeneities in poly-Si/4H-SiC heterojunction diodes
F Triendl, G Pfusterschmied, G Pobegen, JP Konrath, U Schmid
Semiconductor Science and Technology 35 (11), 115011, 2020
192020
Influence of the AlN/Pt-ratio on the electro-mechanical properties of multilayered AlN/Pt thin film strain gauges at high temperatures
P Schmid, F Triendl, C Zarfl, S Schwarz, W Artner, M Schneider, U Schmid
Sensors and Actuators A: Physical 302, 111805, 2020
132020
Electro-mechanical properties of multilayered aluminum nitride and platinum thin films at high temperatures
P Schmid, F Triendl, C Zarfl, S Schwarz, W Artner, M Schneider, U Schmid
Sensors and Actuators A: Physical 293, 128-135, 2019
132019
Ti/4H-SiC schottky barrier modulation by ultrathin a-SiC: H interface layer
F Triendl, G Pfusterschmied, C Berger, S Schwarz, W Artner, U Schmid
Thin Solid Films 721, 138539, 2021
102021
On the crystallization behavior of sputter-deposited a-Si films on 4H-SiC
F Triendl, G Pfusterschmied, G Fleckl, S Schwarz, U Schmid
Thin Solid Films 697, 137837, 2020
82020
Evaluation of interface trap characterization methods in 4H-SiC metal oxide semiconductor structures over a wide temperature range
F Triendl, G Fleckl, M Schneider, G Pfusterschmied, U Schmid
Journal of Vacuum Science & Technology B 37 (3), 2019
82019
Impact of adhesion promoters and sputter parameters on the electro-mechanical properties of Pt thin films at high temperatures
P Schmid, C Zarfl, F Triendl, FJ Maier, S Schwarz, M Schneider, U Schmid
Sensors and Actuators A: Physical 285, 149-157, 2019
72019
Barrier height tuning by inverse sputter etching at poly-Si/4H-SiC heterojunction diodes
F Triendl, G Pfusterschmied, S Schwarz, G Pobegen, JP Konrath, ...
Semiconductor Science and Technology 36 (5), 055021, 2021
62021
Growth and characterization of low pressure chemical vapor deposited Si on Si-face 4H–SiC
F Triendl, G Pfusterschmied, G Pobegen, S Schwarz, W Artner, ...
Materials Science in Semiconductor Processing 131, 105888, 2021
42021
Impact of Ar+ bombardment of 4H–SiC substrates on Schottky diode barrier heights
G Pfusterschmied, F Triendl, M Schneider, U Schmid
Materials Science in Semiconductor Processing 123, 105504, 2021
32021
Low-temperature epitaxial Si on 4H-SiC using metal-induced crystallization
F Triendl, G Pfusterschmied, C Zellner, W Artner, K Hradil, U Schmid
Materials Letters: X 6, 100040, 2020
32020
Si/4H–SiC heterostructure formation using metal-induced crystallization
F Triendl, G Pfusterschmied, S Schwarz, W Artner, U Schmid
Materials Science in Semiconductor Processing 128, 105763, 2021
22021
Interface trap and mobile charge density in dry oxidized 4H-SiC MOS structures in a wide temperature range
F Triendl
Wien, 2018
12018
Semiconductor device
JP Konrath, G Pfusterschmied, G Pobegen, U Schmid, F Triendl
US Patent 11,677,023, 2023
2023
Microstructural and electrical characterization of Si/4H-SiC heterojunction diodes
F Triendl
Technische Universitšt Wien, 2021
2021
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