Поклонский, Николай Александрович (NA Poklonski)

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Вырко, Сергей Александрович (Vyrk...Belarusian State University, Faculty of Physics, 4 Nezavisimosti Ave., 220030 Minsk, BelarusVerified email at bsu.by
Лапчук, Наталья Михайловна (NM L...Белорусский государственный университет, физический факультет, пр. Независимости 4, 220030 МинскVerified email at bsu.by
Nikolay GorbachukBelarusian State UniversityVerified email at bsu.by
Ratkevich, Sergey Vladimirovich (Ратк...Belarusian State University, Faculty of Radiophysics, 4 Nezavisimosti Av., 220030 Minsk, BelarusVerified email at bsu.by
Lozovik Y.E.Institute of SpectroscopyVerified email at isan.troitsk.ru
Ковалев Александр Игоревич (AI Kov...Junior Researcher, Belarusian State University, Faculty of Physics, 4 Nezavisimosti Av., 220030Verified email at bsu.by
Andrei SiahloСтарший научный сотрудник, БГУVerified email at bsu.by
Власов, Анатолий Тимофеевич (Vlas...Belarusian State University, Physics Department, 4 Nezavisimosti Ave., 220030 Minsk, BelarusVerified email at bsu.by
Andreas Dirk WieckProfessor für Physik, Ruhr-Universität BochumVerified email at rub.de
Huynh V. PhucDong Thap University, VietnamVerified email at dthu.edu.vn
Деревяго, Александр Николаевич (D...Belarusian State University, Physics Department, 4 Nezavisimosti Av., 220030 Minsk, BelarusVerified email at bsu.by
Irina LebedevaUniversidad del País VascoVerified email at ehu.eus
Ксеневич, Виталий Казимирович (VK...Belarusian State University, Physics Department, 4 Nezavisimosti Av., 220030, Minsk, BelarusVerified email at bsu.by
Vladimir SkuratovJoint Institute for Nuclear ResearchVerified email at jinr.ru
Aleksey A. KocherzhenkoUniversity of California, BerkeleyVerified email at berkeley.edu
Assoc. Prof. Chuong V. NguyenLe Quy Don Technical UniversityVerified email at lqdtu.edu.vn
Доросинец, Владимир Адамович (VA...Belarusian State University, Physics Department, 4 Nezavisimosti Av., 220030 Minsk, BelarusVerified email at bsu.by
Tomasz N. KołtunowiczPolitechnika LubelskaVerified email at pollub.pl
Anh D. PhanFaculty of Materials Science and Engineering, Phenikaa UniversityVerified email at mail.usf.edu
Alexander PetrovSenior Research Fellow, Scientific-Practical Materials Research Centre of the NAS of BelarusVerified email at physics.by

Поклонский, Николай Александрович (NA Poklonski)

Belarusian State University, Faculty of Physics, 4 Nezavisimosti Av., 220030 Minsk, Belarus

Verified email at bsu.by

physics of semiconductors solid state physics


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Основы импедансной спектроскопии композитов НА Поклонский, НИ Горбачук Минск: БГУ, 2005	107*	2005
Magneto-optical transport properties of monolayer MoS2 on polar substrates CV Nguyen, NN Hieu, NA Poklonski, VV Ilyasov, L Dinh, TC Phong, ... Physical Review B 96 (12), 125411, 2017	95	2017
Tuning the Electronic Properties, Effective Mass and Carrier Mobility of MoS₂ Monolayer by Strain Engineering: First-Principle Calculations HV Phuc, NN Hieu, BD Hoi, NV Hieu, TV Thu, NM Hung, VV Ilyasov, ... Journal of Electronic Materials 47, 730-736, 2018	70	2018
First-principles study of the structural and electronic properties of graphene/MoS2 interfaces NN Hieu, HV Phuc, VV Ilyasov, ND Chien, NA Poklonski, N Van Hieu, ... Journal of Applied Physics 122 (10), 2017	61	2017
Electrostatic models of insulator-metal and metal-insulator concentration phase transitions in Ge and Si crystals doped by hydrogen-like impurities NA Poklonski, SA Vyrko, AG Zabrodskii Physics of the Solid State 46, 1101-1106, 2004	59*	2004
Synergy of physical properties of low-dimensional carbon-based systems for nanoscale device design NA Poklonski, SA Vyrko, AI Siahlo, ON Poklonskaya, SV Ratkevich, ... Materials Research Express 6 (4), 042002, 2019	51	2019
Negative capacitance (impedance of the inductive type) of silicon p ⁺-n junctions irradiated with fast electrons NA Poklonski, SV Shpakovski, NI Gorbachuk, SB Lastovskii Semiconductors 40, 803-807, 2006	50*	2006
A lattice model of nearest-neighbor hopping conduction and its application to neutron-doped Ge:Ga NA Poklonskii, SY Lopatin, AG Zabrodskii Physics of the Solid State 42 (3), 441-449, 2000	41*	2000
First principles study of optical properties of molybdenum disulfide: From bulk to monolayer NN Hieu, VV Ilyasov, TV Vu, NA Poklonski, HV Phuc, LTT Phuong, BD Hoi, ... Superlattices and Microstructures 115, 10-18, 2018	40	2018
Interaction of a graphene sheet with a ferromagnetic metal plate AD Phan, NA Viet, NA Poklonski, LM Woods, CH Le Physical Review B 86 (15), 155419 (5 pp.), 2012	38	2012
Статистическая физика полупроводников НА Поклонский, СА Вырко, СЛ Поденок М.: КомКнига (УРСС), 2005	38*	2005
Electronic structure model of a metal-filled carbon nanotube NA Poklonskii, EF Kislyakov, GG Fedoruk, SA Vyrko Physics of the Solid State 42, 1966-1971, 2000	38*	2000
Screening of electrostatic fields in crystalline semiconductors by electrons hopping over defects NA Poklonski, VF Stelmakh physica status solidi (b) 117 (1), 93-99, 1983	35	1983
Screening of electrostatic fields in semiconductors by multicharged defects NA Poklonskii, VF Stelmakh, VD Tkachev, SV Voitikov physica status solidi (b) 88 (2), K165-K168, 1978	35	1978
Calculation of capacitance of self-compensated semiconductors with intercenter hops of one and two electrons (by the example of silicon with radiation defects) NA Poklonski, SA Vyrko, AG Zabrodskii Semiconductors 42, 1388-1394, 2008	34*	2008
Uniaxially deformed (5, 5) carbon nanotube: Structural transitions NA Poklonski, EF Kislyakov, NN Hieu, SA Vyrko, AM Popov, YE Lozovik Chemical Physics Letters 464 (4-6), 187-191, 2008	33*	2008
A model of how the thermal ionization energy of impurities in semiconductors depends on their concentration and compensation NA Poklonskii, AI Syaglo, G Biskupski Semiconductors 33, 402-406, 1999	33*	1999
Electronic, optical, and thermoelectric properties of Janus In-based monochalcogenides TV Vu, VTT Vi, HV Phuc, CV Nguyen, NA Poklonski, CA Duque, DP Rai, ... Journal of Physics: Condensed Matter 33 (22), 225503, 2021	32	2021
Equivalent circuit of silicon diodes subjected to high-fluence electron irradiation NA Poklonski, NI Gorbachuk, SV Shpakovski, A Wieck Technical Physics 55, 1463-1471, 2010	31*	2010
Electrical properties of silicon diodes with p+n junctions irradiated with 197Au+26 swift heavy ions NA Poklonski, NI Gorbachuk, SV Shpakovski, AV Petrov, SB Lastovskii, ... Nuclear Instruments and Methods in Physics Research Section B: Beam …, 2008	31	2008

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